DDTB (xxxx) UDDTB (xxxx) U
PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
SOT-323
A
Complementary NPN Types Available (DDTD)
Dim Min Max
Built-In Biasing Resistors, R1, R2
A 0.25 0.40
Lead Free/RoHS Compliant (Note 2)
B 1.15 1.35
Gree Device (Note 3 and 4)
B C
C 2.00 2.20
Mechanical Data
D 0.65 Nominal
Case: SOT-323
E 0.30 0.40
G
Case Material: Molded Plastic,Gree Molding
G 1.20 1.40
H
Compound, Note 4. UL Flammability Classification
Rating 94V-0
H 1.80 2.20
K
Moisture Sensitivity: Level 1 per J-STD-020C
M
J 0.0 0.10
Terminal Connections: See Diagram
K 0.90 1.00
Terminals: Solderable per MIL-STD-202, Method 208
J
L 0.25 0.40
Lead Free Plating (Matte Tin Finish annealed over Alloy
D E L
42 leadframe).
M 0.10 0.18
Marking Code & Date Code Information: See Table
0 8
Below & Page 3
All Dimensions in mm
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
OUT
3
P/N R1 (NOM) R2 (NOM) Type Code
C
DDTB113EU 1K 1K P60
R1
B
DDTB123EU 2.2K 2.2K P61
DDTB143EU 4.7K 4.7K P62 R2
DDTB114EU 10K 10K P63
E
DDTB122JU 0.22K 4.7K P64
DDTB113ZU 1K 10K P65 1 2
DDTB123YU 2.2K 10K P66
IN GND(+)
DDTB133HU 3.3K 10K P67
DDTB123TU 2.2K OPEN P69
Schematic and Pin Configuration
DDTB143TU 4.7K OPEN P70
DDTB114TU 10K OPEN P71
DDTB114GU 0 10K P72
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2) V -50 V
CC
Input Voltage, (1) to (2) DDTB113EU +10 to -10
DDTB123EU +10 to -12
DDTB143EU +10 to -30
DDTB114EU +10 to -40
V V
IN
DDTB122JU +5 to -5
DDTB113ZU +5 to -10
DDTB123YU +5 to -12
DDTB133HU +6 to -20
Input Voltage, (2) to (1) DDTB123TU
DDTB143TU
V -5 V
EBO (MAX)
DDTB114TU
DDTB114GU
Output Current All I -500 mA
C
Power Dissipation P 200 mW
d
Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W
R
JA
Operating and Storage Temperature Range T , T -55 to +150 C
j STG
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at
Electrical Characteristics @T = 25C unless otherwise specified R1, R2 Types
A
Characteristic Symbol Min Typ Max Unit Test Condition
DDTB113EU -0.5
DDTB123EU -0.5
DDTB143EU -0.5
DDTB114EU -0.5
V
V V = -5V, I = -100A
l(off) CC O
DDTB122JU -0.5
DDTB113ZU -0.3
DDTB123YU -0.3
DDTB133HU -0.3
Input Voltage
DDTB113EU -3.0 V = -0.3V, I = -20mA
O O
DDTB123EU -3.0 V = -0.3V, I = -20mA
O O
DDTB143EU -3.0
V = -0.3V, I = -20mA
O O
DDTB114EU -3.0 V = -0.3V, I = -10mA
O O
V V
l(on)
DDTB122JU -3.0 V = -0.3V, I = -30mA
O O
DDTB113ZU -2.0
V = -0.3V, I = -20mA
O O
DDTB123YU -2.0
V = -0.3V, I = -20mA
O O
DDTB133HU -2.0
V = -0.3V, I = -20mA
O O
Output Voltage -0.3V V
V I /I = -50mA/-2.5mA
O(on) O l
DDTB113EU -7.2
DDTB123EU -3.8
DDTB143EU -1.8
DDTB114EU -0.88
Input Current mA
I V = -5V
l I
DDTB122JU -28
DDTB113ZU -7.2
DDTB123YU -3.6
DDTB133HU -2.4
Output Current I -0.5 A V = -50V, V = 0V
O(off) CC I
DDTB113EU 33
DDTB123EU 39
DDTB143EU 47
DDTB114EU 56
DC Current Gain
G V = -5V, I = -50mA
l O O
DDTB122JU 47
DDTB113ZU 56
DDTB123YU 56
DDTB133HU 56
Gain-Bandwidth Product* f 200 MHz V = -10V, I = -5mA, f = 100MHz
T CE E
* Transistor - For Reference Only
Electrical Characteristics @T = 25C unless otherwise specified R1-Only, R2-Only Types
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage -50 V
BV I = -50A
CBO C
Collector-Emitter Breakdown Voltage -40 V
BV I = -1mA
CEO C
I = -50A
Emitter-Base Breakdown Voltage DDTB123TU E
DDTB143TU I = -50A
E
BV -5 V
EBO
DDTB114TU
I = -50A
E
DDTB114GU
I = -720A
E
Collector Cutoff Current I -0.5 A V = -50V
CBO CB
DDTB123TU -0.5
DDTB143TU -0.5
Emitter Cutoff Current A
I V = -4V
EBO EB
DDTB114TU -0.5
DDTB114GU -580
-300
Collector-Emitter Saturation Voltage -0.3 V
V I = -50mA, I = -2.5mA
CE(sat) C B
DDTB123TU 100 250 600
DDTB143TU 100 250 600
DC Current Transfer Ratio h I = -5mA, V = -5V
FE C CE
DDTB114TU 100 250 600
DDTB114GU 56
Gain-Bandwidth Product* f 200 MHz V = -10V, I = 5mA, f = 100MHz
T CE E
* Transistor - For Reference Only
DDTD (xxxx) U
DS30383 Rev. 6 - 2
2 of 3
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