DDTB DDTB (LO-R1)(LO-R1) U U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary NPN Types Available (DDTD) SOT-323 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 Gree Device (Note 3 & 4) B C B 1.15 1.35 Mechanical Data C 2.00 2.20 Case: SOT-323 D 0.65 Nominal G Case Material: Molded Plastic,Gree Molding E 0.30 0.40 H Compound, Note 4. UL Flammability Classification G 1.20 1.40 Rating 94V-0 K M H 1.80 2.20 Moisture Sensitivity: Level 1 per J-STD-020C J 0.0 0.10 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram J K 0.90 1.00 D E L Lead Free Plating (Matte Tin Finish annealed over Alloy L 0.25 0.40 42 leadframe) M 0.10 0.18 OUT Marking Information: See Table Below & Page 3 3 0 8 Ordering Information: See Page 3 C All Dimensions in mm Weight: 0.006 grams (approximate) R1 B R2 P/N R1 (NOM) R2 (NOM) Type Code E P75 DDTB122LU 0.22K 10K 1 2 P76 DDTB142JU 0.47K 10K IN GND(+) P77 DDTB122TU 0.22K OPEN Schematic and Pin Configuration P78 DDTB142TU OPEN 0.47K Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (3) to (2) -50 V V CC Input Voltage, (1) to (2) DDTB122LU +5 to -6 V V IN DDTB142JU +5 to -6 Input Voltage, (2) to (1) DDTB122TU V -5 V EBO (MAX) DDTB142TU Output Current All -500 mA I C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDTB122LU -0.3 V V V = -5V, I = -100A l(off) CC O DDTB142JU -0.3 Input Voltage DDTB122LU -2.0 V = -0.3V, I = -20mA O O V V l(on) DDTB142JU -2.0 V = -0.3V, I = -20mA O O Output Voltage V -0.3V V I /I = -50mA/-2.5mA O(on) O l DDTB122LU -28 Input Current I mA V = -5V l I DDTB142JU -13 Output Current I -0.5 A V = -50V, V = 0V O(off) CC I DDTB122LU 56 DC Current Gain G V = -5V, I = -50mA l O O DDTB142JU 56 Gain-Bandwidth Product* 200 MHz f V = -10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1 Only Types A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 V I = -50A CBO C Collector-Emitter Breakdown Voltage BV -40 V I = -1mA CEO C Emitter-Base Breakdown Voltage DDTB122TU I = -50A E -5 V BV EBO DDTB142TU I = -50A E Collector Cutoff Current -0.5 I A V = -50V CBO CB DDTB122TU -0.5 Emitter Cutoff Current I A V = -4V EBO EB DDTB142TU -0.5 Collector-Emitter Saturation Voltage V -0.3 V I = -50mA, I = -2.5mA CE(sat) C B DDTB122TU 100 250 600 DC Current Transfer Ratio h I = -5mA, V = -5V FE C CE DDTB142TU 100 250 600 Gain-Bandwidth Product* f 200 MHz V = -10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only DDTB (LO-R1) U DS30400 Rev. 6 - 2 2 of 3 Diodes Incorporated www.diodes.com NEW PRODUCT