DDTC113TLP PRE-BIASED SMALL SIGNAL SURFACE MOUNT NPN TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic.Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020 Lead Free, RoHS Compliant (Note 1) Terminals: Finish - NiPdAu over Copper leadframe. Solderable Halogen and Antimony FreeGree Device (Note 2) per MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.0009 grams (approximate) DFN1006-3 B C C 1 3 B C B IN OUT 1 3 1 E E E 10 K GND 2 2 Bottom View Top View Device Symbol Equivalent Inverter Pin-Out Circuit Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DDTC113TLP-7 N4 7 8 3,000 DDTC113TLP-7B N4 7 8 10,000 Notes: 1. No purposefully added lead. 2. Diodes Inc sGree policy can be found on our website at DDTC113TLP Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage 50 V V CC Input Voltage -5 to +10 V V IN 100 mA Output Current (I) I O C(MAX) Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) P 250 mW D Power Derating above 25C 2 P mW/C der Thermal Resistance, Junction to Ambient Air (Note 4) 500 C/W R JA (Equivalent to one heated junction of NPN) Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage BV 50 V I = 10A, I = 0 CBO C E Collector-Emitter Breakdown Voltage 50 V BV I = 1.0mA, I = 0 CEO C B Emitter-Base Breakdown Voltage 5 V BV I = 50A, I = 0 EBO E C Collector-Base Cutoff Current 0.5 I A V = 50V, I = 0 CBO CB E Emitter-Base Cutoff Current I 0.5 A V = 4V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) DC Current Gain 100 380 600 h V = 5V, I = 1mA FE CE C Collector-Emitter Saturation Voltage V 0.25 V I = 50mA, I = 2.5mA CE(sat) C B Input Resistance R1 0.7 1 1.3 K SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product 250 MHz f V = 10V, I = 5mA, f = 100MHz T CE E Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch 5. Short duration pulse test used to minimize self-heating effect. 800 700 600 500 400 R = 500 C/W JA T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4) 2 of 4 February 2011 DDTC113TLP Diodes Incorporated www.diodes.com Document number: DS30843 Rev. 8 - 2 P , POWER DISSIPATION (mW) D