N5 N5 N5 DDTC114ELP 50V NPN PRE-BIASED (R1=R2) SMALL SIGNAL TRANSISTOR IN DFN1006 Product Summary Mechanical Data Part Number R1 (NOM) R2 (NOM) Marking Case: X1-DFN1006-3 DDTC114ELP 10k N5 Case Material: Molded Plastic,Gree Molding Compound. 10k UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish - NiPdAu e4 Solderable per MIL-STD-202, Method 208 Epitaxial Planar Die Construction Weight: 0.0009 grams (Approximate) Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability X1-DFN1006-3 OUT C B 3 B B C IN IN OUT C 1 R 1 3 1 E E R 2 E GND 2 2 GND Top View Equivalent Inverter Bottom View Device Symbol Pin-Out Circuit Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DDTC114ELP-7 N5 7 8 3,000 DDTC114ELP-7B N5 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DDTC114ELP Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Supply Voltage V 50 V CC Input Voltage V -10 to +40 V IN Output Current I 50 mA O Collector Current I 100 mA C(MAX) Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 250 mW D Power Derating above +25C P 2 mW/C der Thermal Resistance, Junction to Ambient Air (Note 5) 500 C/W R JA (Equivalent to one heated junction of NPN) Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Off Characteristics (Note 6) Collector-Base Breakdown Voltage BV 50 V I = 50A, I = 0 CBO C E Collector-Emitter Breakdown Voltage BV 50 V I = 1.0mA, I = 0 CEO C B Collector Cutoff Current I 0.5 A V = 50V, V = 3.0V CEX CE EB(OFF) Collector-Base Cut Off Current I 0.1 A V = 50V, I = 0 CBO CB E Collector-Emitter Cut Off Current, I I 0.1 A V = 50V, I = 0 O(OFF) CES CB B Emitter-Base Cut Off Current 800 A I V = 10V, I = 0 EBO EB C Input Off Voltage 0.5 1.16 V V V = 5V, I = 100A I(off) CC O Input On Voltage 2.5 V V V = 0.3V, I = 10mA I(on) CC O On Characteristics (Notes 6 & 7) 10 V = 5V, I = 1mA CE C 15 V = 5V, I = 2mA CE C DC Current Gain h 60 V = 5V, I = 10mA FE CE C 100 V = 5V, I = 50mA CE C 90 V = 5V, I = 70mA CE C 0.15 V I = 10mA, I = 1mA C B 0.2 V I = 50mA, I = 5mA C B Collector-Emitter Saturation Voltage V CE(sat) 0.25 V I = 50mA, I = 10mA C B 0.3 V I = 70mA, I = 10mA C B 0.85 V V = 5V, I = 2mA CE C Base-Emitter Turn-On Voltage V BE(on) 0.95 V V = 5V, I = 10mA CE C 0.98 V IC = 10mA, IB = 1mA Base-Emitter Saturation Voltage V BE(sat) 1.2 V I = 50mA, I = 5mA C B Input Current 0.88 mA I V = 5V I I 0.25 V Output On Voltage (Same as V ) V I = 2.5mA, I = 50mA CE(sat) O(on) I O Input Resistance R1 7 10 13 k Resistance Ratio (R2/R1) 0.8 1 1.2 Small Signal Characteristics Current Gain-Bandwidth Product 250 MHz f V = 10V, I = 5mA, f = 1MHz T CE E Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 7. Guaranteed by design. 2 of 6 DDTC114ELP May 2015 Diodes Incorporated www.diodes.com Document number: DS30945 Rev. 8 - 2