DDTC (R2-ONLY SERIES) E
NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
SOT-523
Complementary PNP Types Available (DDTA)
A
Built-In Biasing Resistor, R2 only
Dim Min Max Typ
Lead Free/RoHS Compliant (Note 2)
C A 0.15 0.30 0.22
Gree Device (Note 3 and 4)
B 0.75 0.85 0.80
B C
TOP VIEW
C 1.45 1.75 1.60
Mechanical Data
D 0.50
E
B
Case: SOT-523
G 0.90 1.10 1.00
G
Case Material: Molded Plastic. UL Flammability
H H 1.50 1.70 1.60
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C J 0.00 0.10 0.05
K
M
N
Terminals: Solderable per MIL-STD-202, Method 208
K 0.60 0.80 0.75
Lead Free Plating (Matte Tin Finish annealed over Alloy
L 0.10 0.30 0.22
J
42 leadframe).
D L
M 0.10 0.20 0.12
Terminal Connections: See Diagram
N 0.45 0.65 0.50
Marking Information: See Table Below & Page 2
0 8
Ordering Information: See Page 2
Weight: 0.002 grams (approximate) All Dimensions in mm
C
P/N R1 (NOM) Marking
B
DDTC114GE 10K N26
R
2
DDTC124GE 22K N27
DDTC144GE 47K N28
E
DDTC115GE N29
100K
SCHEMATIC DIAGRAM
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector Base Voltage V 50 V
CBO
Collector-Emitter Voltage 50 V
V
CEO
Emitter-Base Voltage V 5 V
EBO
Collector Current 100 mA
I (Max)
C
Power Dissipation P 150 mW
d
Thermal Resistance, Junction to Ambient Air (Note 1) 833 C/W
R
JA
Operating and Storage and Temperature Range T T -55 to +150 C
J, STG
Notes: 1. Mounted on FR4 PC Board with recommended pad layout, which can be found on our website at
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage 50 V
BV I = 50A
CBO C
Collector-Emitter Breakdown Voltage BV 50 V I = 1mA
CEO C
I = 720A, DDTC114GE
E
I = 330 A, DDTC124GE
E
Emitter-Base Breakdown Voltage 5 V
BV
EBO
I = 160 A, DDTC144GE
E
I = 72 A, DDTC115GE
E
Collector Cutoff Current I 0.5 A V = 50V
CBO CB
DDTC114GE 300 580
DDTC124GE 140 260
Emitter Cutoff Current
I A V = 4V
EBO EB
DDTC144GE 65 130
DDTC115GE 30 58
Collector-Emitter Saturation Voltage V 0.3 V I = 10mA, I = 0.5mA
CE(sat) C B
DDTC114GE 30
DDTC124GE 56
DC Current Transfer Ratio
h I = 5mA, V = 5V
FE C CE
DDTC144GE 68
DDTC115GE 82
Bleeder Resistor (R ) Tolerance R -30 +30 %
2 2
Gain-Bandwidth Product* 250 MHz
f V = 10V, I = -5mA, f = 100MHz
T CE E
* Transistor For Reference Only
TYPICAL CURVES DDTC114GE
250 1
I/I = 10
CB
200
0.1
75C
150
-25C
25C
100
0.01
50
0 0.001
10 20 30 40 50
-50 0 50 100 150 0
I , COLLECTOR CURRENT (mA)
T , AMBIENT TEMPERATURE (C)
C
A
Fig. 2 V vs. I
Fig. 1 Derating Curve
CE(SAT) C
1,000 5
I = 0mA
E
V = 10
CE
4
3
100
2
1
10 0
0 10 15 30
110 100 5 20 25
I , COLLECTOR CURRENT (mA) V , REVERSE BIAS VOLTAGE (V)
C
R
Fig. 3 DC Current Gain Fig. 4 Output Capacitance
DS30316 Rev. 8 2 2 of 3 DDTC (R2-ONLY SERIES) E
Diodes Incorporated
www.diodes.com
P , POWER DISSIPATION (MILLIWATTS)
h, DC CURRENT GAIN (NORMALIZED)
D
FE
V, MAXIMUM COLLECTOR VOLTAGE (V)
CE(SAT)
C , CAPACITANCE (pF)
OB