DDTC (R2-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) C B Gree Device (Note 3 and 4) B 1.15 1.35 C 2.00 2.20 Mechanical Data B E D 0.65 Nominal G Case: SOT-323 H E 0.30 0.40 Case Material: Molded Plastic,Gree Molding Compound, Note 4. UL Flammability Classification G 1.20 1.40 K M Rating 94V-0 H 1.80 2.20 Moisture Sensitivity: Level 1 per J-STD-020C J 0.0 0.10 Terminal Connections: See Diagram J D E L Terminals: Solderable per MIL-STD-202, Method 208 K 0.90 1.00 Lead Free Plating (Matte Tin Finish annealed over L 0.25 0.40 Alloy 42 leadframe). C M 0.10 0.18 Marking: Date Code and Type Code, See Page 3 B Ordering Information: See Page 3 0 8 R 2 Type Code: See Table Below All Dimensions in mm E Weight: 0.006 grams (approximate) SCHEMATIC DIAGRAM P/N R2 (NOM) Type Code DDTC114GUA 10K N26 DDTC124GUA 22K N27 DDTC144GUA 47K N28 DDTC115GUA N29 100K Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 50 V V CBO Collector-Emitter Voltage 50 V V CEO Emitter-Base Voltage 5 V V EBO Collector Current I (Max) 100 mA C Power Dissipation P 200 mW d Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage BV 50 V I = 1mA CEO C I = 720A, DDTC114GUA E I = 330A, DDTC124GUA E Emitter-Base Breakdown Voltage BV 5 V EBO I = 160A, DDTC144GUA E I = 72A, DDTC115GUA E Collector Cutoff Current 0.5 I A V = 50V CBO CB DDTC114GUA 300 580 DDTC124GUA 140 260 Emitter Cutoff Current I A V = 4V EBO EB DDTC144GUA 65 130 DDTC115GUA 30 58 Collector-Emitter Saturation Voltage V 0.3 V I = 10mA, I = 0.5mA CE(sat) C B DDTC114GUA 30 DDTC124GUA 56 DC Current Transfer Ratio h I = 5mA, V = 5V FE C CE DDTC144GUA 68 DDTC115GUA 82 -30 +30 % Bleeder Resistor (R ) Tolerance R 2 2 V = 10V, I = -5mA, CE E Gain-Bandwidth Product* f 250 MHz T f = 100MHz * Transistor - For Reference Only Typical Characteristics DDTC114GUA 250 1 I/I = 10 CB 200 0.1 75C 150 -25C 25C 100 0.01 50 0 0.001 -50 050 100 150 50 10 20 40 0 30 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1 Derating Curve Fig. 2 V vs. I CE(SAT) C 1,000 5 I = 0mA V = 10 E CE 4 3 100 2 1 0 10 110 100 0 10 15 25 30 5 20 I , COLLECTOR CURRENT (mA) V , REVERSE BIAS VOLTAGE (V) C R Fig. 3 DC Current Gain Fig. 4 Output Capacitance DS30324 Rev. 7 - 2 2 of 3 DDTC (R2-ONLY SERIES) UA Diodes Incorporated www.diodes.com NEW PRODUCT hFE, DC CURRENT GAIN (NORMALIZED) P , POWER DISSIPATION (MILLIWATTS) d V, MAXIMUM COLLECTOR VOLTAGE (V) CE(SAT) C , CAPACITANCE (pF) OB