DDTC (R1-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 Only Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony FreeGree Device (Note 3) Terminals: Matte Tin Finish. Solderable per MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.002 grams (Approximate) PPAP Capable (Note 4) Part Number R1 (NOM) Marking DDTC113TE 1k N01 DDTC123TE 2.2k N03 DDTC143TE 4.7k N07 DDTC114TE 10k N12 DDTC124TE 22k N16 DDTC144TE 47k N19 DDTC115TE 100k N23 DDTC125TE 200k N25 SOT523 Top View Device Schematic Top View Ordering Information (Note 5) Part Number Compliance Reel Size (inches) Tape Width (mm) Quantity Per Reel DDTC113TE-7-F AEC-Q101 7 8 3,000 AEC-Q101 3,000 DDTC123TE-7-F 7 8 DDTC143TE-7-F AEC-Q101 7 8 3,000 DDTC114TE-7-F AEC-Q101 7 8 3,000 DDTC124TE-7-F AEC-Q101 7 8 3,000 DDTC124TEQ-7-F Automotive 7 8 3,000 DDTC144TE-7-F AEC-Q101 7 8 3,000 DDTC115TE-7-F AEC-Q101 7 8 3,000 DDTC125TE-7-F AEC-Q101 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DDTC (R1-ONLY SERIES) E Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 5 V EBO Collector Current I 100 mA C(MAX) Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation P 150 mW D Thermal Resistance, Junction to Ambient Air (Note 6) 833 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage BV 50 V I = 1mA CEO C Emitter-Base Breakdown Voltage BV 5 V I = 50A EBO E Collector Cutoff Current I 0.5 A V = 50V CBO CB Emitter Cutoff Current I 0.5 A V = 4V EBO EB I /I = 10mA/1mA DDTC113TE C B I /I = 5mA/0.5mA DDTC123TE C B I /I = 2.5mA/0.25mA DDTC143TE C B I /I = 1mA/0.1mA DDTC114TE C B Collector-Emitter Saturation Voltage 0.3 V V CE(SAT) I /I = 5mA/0.5mA DDTC124TE C B I /I = 2.5mA/0.25mA DDTC144TE C B I /I = 1mA/0.1mA DDTC115TE C B I /I = 0.5mA/0.05mA DDTC125TE C B DC Current Transfer Ratio h 100 250 600 I = 1mA, V = 5V FE C CE Input Resistor (R ) Tolerance R -30 +30 % 1 1 Gain-Bandwidth Product (Note 7) f 250 MHz V = 10V, I = -5mA, f = 100MHz T CE E Notes: 6. Mounted on FR-4 PC Board with minimum recommended pad layout. 7. Transistor only. 2 of 5 DDTC (R1-ONLY SERIES) E May 2018 Diodes Incorporated www.diodes.com Document number: DS30315 Rev. 10 - 2