DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C Gree Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal B E Mechanical Data E 0.30 0.40 G G 1.20 1.40 Case: SOT-323 H H 1.80 2.20 Case Material: Molded Plastic,Gree Molding Compound, Note 4. UL Flammability Classification J 0.0 0.10 K M Rating 94V-0 K 0.90 1.00 Moisture Sensitivity: Level 1 per J-STD-020C L 0.25 0.40 Terminal Connections: See Diagram J M 0.10 0.18 D E L Terminals: Solderable per MIL-STD-202, Method 208 0 8 Lead Free Plating (Matte Tin Finish annealed over Alloy All Dimensions in mm C R 1 42 leadframe). B Marking Information: See Diagrams & Page 3 Type Code: See Table Below Ordering Information: See Page 3 E Weight: 0.006 grams (approximate) SCHEMATIC DIAGRAM P/N R1 (NOM) Type Code DDTC113TUA 1K N01 2.2K N03 DDTC123TUA DDTC143TUA 4.7K N07 DDTC114TUA 10K N12 N16 DDTC124TUA 22K DDTC144TUA N19 47K DDTC115TUA 100K N23 DDTC125TUA 200K N25 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage 5 V V EBO Collector Current I (Max) 100 mA C Power Dissipation P 200 mW d Thermal Resistance, Junction to Ambient Air (Note 1) 833 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage 50 V BV I = 1mA CEO C Emitter-Base Breakdown Voltage 5 V BV I = 50A EBO E Collector Cutoff Current I 0.5 A V = 50V CBO CB Emitter Cutoff Current I 0.5 A V = 4V EBO EB I I = 10mA/1mA DDTC113TUA C/ B I I = 5mA/0.5mA DDTC123TUA C/ B I I = 2.5mA/.25mA DDTC143TUA C/ B I I = 1mA/.1mA DDTC114TUA C/ B Collector-Emitter Saturation Voltage V 0.3 V CE(sat) I I = 5mA/0.5mA DDTC124TUA C/ B I I = 2.5mA/.25mA DDTC144TUA C/ B I I = 1mA/0.1mA DDTC115TUA C/ B I I = .5mA/.05mA DDTC125TUA C/ B DC Current Transfer Ratio h 100 250 600 I = 1mA, V = 5V FE C CE Input Resistor (R ) Tolerance R -30 +30 % 1 1 V = 10V, I = -5mA, CE E Gain-Bandwidth Product* f 250 MHz T f = 100MHz *Transistor - For Reference Only Typical Curves DDTC114TUA 1 250 I/I = 10 CB 200 0.1 75C 150 -25C 25C 100 0.01 50 0 0.001 0 10 20 30 40 50 -50 050 100 150 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (C) C A Fig. 2 V vs. I Fig. 1 Derating Curve CE(SAT) C 1,000 4 I = 0mA E 3 100 2 10 1 1 0 0 10 15 30 110 100 5 20 25 I , COLLECTOR CURRENT (mA) V , REVERSE BIAS VOLTAGE (V) C R Fig. 3 DC Current Gain Fig. 4 Output Capacitance DDTC (R1-ONLY SERIES) UA DS30323 Rev. 7 2 2 of 3 Diodes Incorporated www.diodes.com h, DC CURRENT GAIN (NORMALIZED) P , POWER DISSIPATION (MILLIWATTS) FE D V , MAXIMUM COLLECTOR VOLTAGE (V) C , CAPACITANCE (pF) CE(SAT) OB