DDTC (R1-ONLY SERIES) UA
NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
A SOT-323
Complementary PNP Types Available (DDTA)
Dim Min Max
C
Built-In Biasing Resistor, R1 only
A 0.25 0.40
Lead Free/RoHS Compliant (Note 2)
B 1.15 1.35
B C
Gree Device (Note 3 and 4)
C 2.00 2.20
D 0.65 Nominal
B E
Mechanical Data
E 0.30 0.40
G
G 1.20 1.40
Case: SOT-323
H
H 1.80 2.20
Case Material: Molded Plastic,Gree Molding
Compound, Note 4. UL Flammability Classification
J 0.0 0.10
K
M
Rating 94V-0
K 0.90 1.00
Moisture Sensitivity: Level 1 per J-STD-020C
L 0.25 0.40
Terminal Connections: See Diagram
J
M 0.10 0.18
D E L
Terminals: Solderable per MIL-STD-202, Method 208
0 8
Lead Free Plating (Matte Tin Finish annealed over Alloy
All Dimensions in mm
C
R
1
42 leadframe).
B
Marking Information: See Diagrams & Page 3
Type Code: See Table Below
Ordering Information: See Page 3
E
Weight: 0.006 grams (approximate)
SCHEMATIC DIAGRAM
P/N R1 (NOM) Type Code
DDTC113TUA 1K N01
2.2K N03
DDTC123TUA
DDTC143TUA 4.7K N07
DDTC114TUA 10K N12
N16
DDTC124TUA 22K
DDTC144TUA N19
47K
DDTC115TUA 100K N23
DDTC125TUA 200K N25
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage V 50 V
CBO
Collector-Emitter Voltage V 50 V
CEO
Emitter-Base Voltage 5 V
V
EBO
Collector Current I (Max) 100 mA
C
Power Dissipation P 200 mW
d
Thermal Resistance, Junction to Ambient Air (Note 1) 833 C/W
R
JA
Operating and Storage Temperature Range T , T -55 to +150 C
j STG
Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on
our website at
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV 50 V I = 50A
CBO C
Collector-Emitter Breakdown Voltage 50 V
BV I = 1mA
CEO C
Emitter-Base Breakdown Voltage 5 V
BV I = 50A
EBO E
Collector Cutoff Current I 0.5 A V = 50V
CBO CB
Emitter Cutoff Current I 0.5 A V = 4V
EBO EB
I I = 10mA/1mA DDTC113TUA
C/ B
I I = 5mA/0.5mA DDTC123TUA
C/ B
I I = 2.5mA/.25mA DDTC143TUA
C/ B
I I = 1mA/.1mA DDTC114TUA
C/ B
Collector-Emitter Saturation Voltage V 0.3 V
CE(sat)
I I = 5mA/0.5mA DDTC124TUA
C/ B
I I = 2.5mA/.25mA DDTC144TUA
C/ B
I I = 1mA/0.1mA DDTC115TUA
C/ B
I I = .5mA/.05mA DDTC125TUA
C/ B
DC Current Transfer Ratio h 100 250 600 I = 1mA, V = 5V
FE C CE
Input Resistor (R ) Tolerance R -30 +30 %
1 1
V = 10V, I = -5mA,
CE E
Gain-Bandwidth Product* f 250 MHz
T
f = 100MHz
*Transistor - For Reference Only
Typical Curves DDTC114TUA
1
250
I/I = 10
CB
200
0.1
75C
150
-25C
25C
100
0.01
50
0 0.001
0 10 20 30 40 50
-50 050 100 150
I , COLLECTOR CURRENT (mA)
T , AMBIENT TEMPERATURE (C) C
A
Fig. 2 V vs. I
Fig. 1 Derating Curve
CE(SAT) C
1,000
4
I = 0mA
E
3
100
2
10
1
1
0
0 10 15 30
110 100 5 20 25
I , COLLECTOR CURRENT (mA) V , REVERSE BIAS VOLTAGE (V)
C R
Fig. 3 DC Current Gain Fig. 4 Output Capacitance
DDTC (R1-ONLY SERIES) UA
DS30323 Rev. 7 2 2 of 3
Diodes Incorporated
www.diodes.com
h, DC CURRENT GAIN (NORMALIZED)
P , POWER DISSIPATION (MILLIWATTS)
FE
D
V , MAXIMUM COLLECTOR VOLTAGE (V)
C , CAPACITANCE (pF) CE(SAT)
OB