DDTC (LO-R1) U
NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
A
Complementary PNP Types Available (DDTA)
SOT-323
Built-In Biasing Resistors
Dim Min Max
Lead Free/RoHS Compliant (Note 2)
A 0.25 0.40
Gree Device (Note 3 & 4)
C
B
B 1.15 1.35
Mechanical Data
C 2.00 2.20
Case: SOT-323 D 0.65 Nominal
G
Case Material: Molded Plastic,Gree Molding
E 0.30 0.40
Compound, Note 4. UL Flammability Classification H
G 1.20 1.40
Rating 94V-0
H 1.80 2.20
Moisture Sensitivity: Level 1 per J-STD-020C
K
M
Terminals: Solderable per MIL-STD-202, Method 208 J 0.0 0.10
Terminal Connections: See Diagram
K 0.90 1.00
Lead Free Plating (Matte Tin Finish annealed over Alloy J
L 0.25 0.40
D E L
42 leadframe).
M 0.10 0.18
Marking Information: See Table Below & Page 3
0 8
Ordering Information: See Page 3
OUT
Weight: 0.006 grams (approximate) All Dimensions in mm
3
C
P/N R1 (NOM) R2 (NOM) Type Code
R1
B
DDTC122LU 0.22K 10K N81
DDTC142JU 0.47K N82
10K
R2
DDTC122TU 0.22K OPEN N83
DDTC142TU OPEN N84
0.47K
E
1 2
IN GND(0)
Schematic and Pin Configuration
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2) V 50 V
CC
Input Voltage, (1) to (2) DDTC122LU -5 to +6
V
V
IN
DDTC142JU -5 to +6
Input Voltage, (2) to (1) DDTC122TU
V 5 V
EBO (MAX)
DDTC142TU
Output Current All 100 mA
I
C
Power Dissipation (Note 1) 200 mW
P
d
Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W
R
JA
Operating and Storage Temperature Range T , T -55 to +150 C
j STG
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at
Electrical Characteristics @T = 25C unless otherwise specified R1, R2 Types
A
Characteristic Symbol Min Typ Max Unit Test Condition
DDTC122LU 0.3
V
V V = 5V, I = 100A
l(off) CC O
DDTC142JU 0.3
Input Voltage
DDTC122LU 2.0 V = 0.3V, I = 20mA
O O
V
V
l(on)
DDTC142JU 2.0
V = 0.3V, I = 20mA
O O
Output Voltage V 0.3V V I /I = 5mA/0.25mA
O(on) O l
DDTC122LU 28
Input Current mA
I V = 5V
l I
DDTC142JU 13
Output Current I 0.5 A V = 50V, V = 0V
O(off) CC I
DDTC122LU 56
DC Current Gain G V = 5V, I = 10mA
l O O
DDTC142JU 56
Gain-Bandwidth Product* 200 MHz
f V = 10V, I = 5mA, f = 100MHz
T CE E
* Transistor - For Reference Only
Electrical Characteristics @T = 25C unless otherwise specified R1-Only
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV 50 V I = 50A
CBO C
Collector-Emitter Breakdown Voltage 40 V
BV I = 1mA
CEO C
Emitter-Base Breakdown Voltage DDTC122TU I = 50A
E
BV 5 V
EBO
DDTC142TU
I = 50A
E
Collector Cutoff Current I 0.5 A V = 50V
CBO CB
DDTC122TU 0.5
Emitter Cutoff Current I A V = 4V
EBO EB
DDTC142TU 0.5
Collector-Emitter Saturation Voltage V 0.3 V I = 5mA, I = 0.25mA
CE(sat) C B
DDTC122TU 100 250 600
DC Current Transfer Ratio
h I = 1mA, V = 5V
FE C CE
DDTC142TU 100 250 600
Gain-Bandwidth Product* 200 MHz
f V = 10V, I = -5mA, f = 100MHz
T CE E
* Transistor - For Reference Only
DDTC (LO-R1) U
DS30401 Rev. 6 - 2
2 of 3
Diodes Incorporated
www.diodes.com