DDTC (LO-R1) E NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 Gree Device (Note 3 and 4) C 1.45 1.75 1.60 D 0.50 G Mechanical Data G 0.90 1.10 1.00 H H 1.50 1.70 1.60 Case: SOT-523 J 0.00 0.10 0.05 Case Material: Molded Plastic. UL Flammability K M K 0.60 0.80 0.75 N Classification Rating 94V-0 L 0.10 0.30 0.22 Moisture Sensitivity: Level 1 per J-STD-020C J Terminals: Finish - Solderable per MIL-STD-202, M 0.10 0.20 0.12 D L Method 208 N 0.45 0.65 0.50 Lead Free Plating (Matte Tin Finish annealed over Alloy 0 8 42 leadframe) All Dimensions in mm Terminal Connections: See Diagram OUT Marking Information: See Table Below & Page 3 3 Ordering Information: See Page 3 C Weight: 0.002 grams (approximate) R1 B R2 P/N R1 (NOM) R2 (NOM) MARKING DDTC122LE 0.22K 10K N81 E DDTC142JE 0.47K 10K N82 1 2 DDTC122TE 0.22K OPEN N83 DDTC142TE N84 0.47K OPEN GND(0) IN Schematic and Pin Diagram Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (3) to (2) V 50 V CC Input Voltage, (1) to (2) DDTC122LE -5 to +6 V V IN DDTC142JE -5 to +6 Input Voltage, (2) to (1) DDTC122TE V 5 V EBO (MAX) DDTC142TE Output Current All I 100 mA C Power Dissipation (Note 1) P 150 mW d Thermal Resistance, Junction to Ambient Air (Note 1) 625 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Note: 1. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDTC122LE 0.3 V V V = 5V, I = 100A l(off) CC O DDTC142JE 0.3 Input Voltage DDTC122LE 2.0 V = 0.3V, I = 20mA O O V V l(on) DDTC142JE 2.0 V = 0.3V, I = 20mA O O Output Voltage V 0.3V V I /I = 5mA/0.25mA O(on) O l DDTC122LE 28 Input Current I mA V = 5V l I DDTC142JE 13 Output Current I 0.5 A V = 50V, V = 0V O(off) CC I DDTC122LE 56 DC Current Gain G V = 5V, I = 10mA l O O DDTC142JE 56 Gain-Bandwidth Product* f 200 MHz V = 10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1-Only Types A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage BV 40 V I = 1mA CEO C Emitter-Base Breakdown Voltage DDTC122TE I = 50A E BV 5 V EBO DDTC142TE I = 50A E Collector Cutoff Current 0.5 I A V = 50V CBO CB DDTC122TE 0.5 Emitter Cutoff Current I A V = 4V EBO EB DDTC142TE 0.5 Collector-Emitter Saturation Voltage V 0.3 V I = 5mA, I = 0.25mA CE(sat) C B DDTC122TE 100 250 600 DC Current Transfer Ratio h I = 1mA, V = 5V FE C CE DDTC142TE 100 250 600 Gain-Bandwidth Product* 200 MHz f V = 10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only 250 200 150 100 50 0 -50 050 100 150 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Derating Curve DDTC (LO-R1) E DS30404 Rev. 6 - 2 2 of 3 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) d