DDTC (R1-ONLY SERIES) E
NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features Mechanical Data
Epitaxial Planar Die Construction Case: SOT523
Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Built-In Biasing Resistor, R1 only
Moisture Sensitivity: Level 1 per J-STD-020
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony FreeGree Device (Note 3) Terminals: Matte Tin Finish.
Solderable per MIL-STD-202, Method 208
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.002 grams (Approximate)
PPAP Capable (Note 4)
Part Number R1 (NOM) Marking
DDTC113TE 1k N01
DDTC123TE 2.2k N03
DDTC143TE 4.7k N07
DDTC114TE 10k N12
DDTC124TE 22k N16
DDTC144TE 47k N19
DDTC115TE 100k N23
DDTC125TE 200k N25
SOT523
Top View
Device Schematic Top View
Ordering Information (Notes 4 & 5)
Part Number Compliance Reel size (inches) Tape width (mm) Quantity per reel
DDTC113TE-7-F AEC-Q101 7 8 3,000
AEC-Q101 3,000
DDTC123TE-7-F 7 8
DDTC143TE-7-F AEC-Q101 7 8 3,000
DDTC114TE-7-F AEC-Q101 7 8 3,000
DDTC124TE-7-F AEC-Q101 7 8 3,000
DDTC124TEQ-7-F Automotive 7 8 3,000
DDTC144TE-7-F AEC-Q101 7 8 3,000
DDTC115TE-7-F AEC-Q101 7 8 3,000
DDTC125TE-7-F AEC-Q101 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DDTC (R1-ONLY SERIES) E
Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector Base Voltage V 50 V
CBO
Collector-Emitter Voltage V 50 V
CEO
Emitter-Base Voltage V 5 V
EBO
Collector Current I 100 mA
C(MAX)
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation P 150 mW
D
Thermal Resistance, Junction to Ambient Air (Note 6) 833 C/W
R
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV 50 V I = 50A
CBO C
Collector-Emitter Breakdown Voltage BV 50 V I = 1mA
CEO C
Emitter-Base Breakdown Voltage BV 5 V I = 50A
EBO E
Collector Cutoff Current I 0.5 A V = 50V
CBO CB
Emitter Cutoff Current I 0.5 A V = 4V
EBO EB
I /I = 10mA/1mA DDTC113TE
C B
I /I = 5mA/0.5mA DDTC123TE
C B
I /I = 2.5mA/.25mA DDTC143TE
C B
I /I = 1mA/.1mA DDTC114TE
C B
Collector-Emitter Saturation Voltage 0.3 V
V
CE(sat)
I /I = 5mA/0.5mA DDTC124TE
C B
I /I = 2.5mA/.25mA DDTC144TE
C B
I /I = 1mA/0.1mA DDTC115TE
C B
I /I = .5mA/.05mA DDTC125TE
C B
DC Current Transfer Ratio h 100 250 600 I = 1mA, V = 5V
FE C CE
Input Resistor (R ) Tolerance R -30 +30 %
1 1
Gain-Bandwidth Product (Note 7) f 250 MHz V = 10V, I = -5mA, f = 100MHz
T CE E
Notes: 6. Mounted on FR4 PC Board with minimum recommended pad layout.
7. Transistor only.
2 of 5
DDTC (R1-ONLY SERIES) E May 2015
Diodes Incorporated
www.diodes.com
Document number: DS30315 Rev. 9 - 2