DDTC (R2-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only C SOT-23 Lead, Halogen and Antimony Free, RoHS CompliantGree Device (Notes 2 and 3) Dim Min Max TOP VIEW B C A 0.37 0.51 B E B 1.20 1.40 Mechanical Data D C 2.30 2.50 E G D 0.89 1.03 Case: SOT-23 H Case Material: Molded Plastic. UL Flammability E 0.45 0.60 Classification Rating 94V-0 K G 1.78 2.05 M Moisture Sensitivity: Level 1 per J-STD-020D H 2.80 3.00 J Terminal Connections: See Diagram L J 0.013 0.10 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over K 0.903 1.10 Alloy 42 leadframe). L 0.45 0.61 Marking: Date Code and Marking Code (See Table M 0.085 0.180 Below & Page 4) C Ordering Information: See Page 4 0 8 B Weight: 0.008 grams (approximate) All Dimensions in mm R 2 P/N R2 (NOM) MARKING E DDTC114GCA 10K N26 DDTC124GCA 22K N27 SCHEMATIC DIAGRAM DDTC144GCA 47K N28 DDTC115GCA N29 100K Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage 5 V V EBO Collector Current I (Max) 100 mA C Power Dissipation P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage 50 V BV I = 1mA CEO C I = 720A, DDTC114GCA E I = 330A, DDTC124GCA E Emitter-Base Breakdown Voltage 5 V BV EBO I = 160A, DDTC144GCA E I = 72A, DDTC115GCA E Collector Cutoff Current I 0.5 A V = 50V CBO CB DDTC114GCA 300 580 DDTC124GCA 140 260 Emitter Cutoff Current I A V = 4V EBO EB DDTC144GCA 65 130 DDTC115GCA 30 58 Collector-Emitter Saturation Voltage V 0.3 V I = 10mA, I = 0.5mA CE(sat) C B DDTC114GCA 30 DDTC124GCA 56 DC Current Transfer Ratio h I = 5mA, V = 5V FE C CE DDTC144GCA 68 DDTC115GCA 82 Bleeder Resistor (R ) Tolerance R -30 +30 % 2 2 V = 10V, I = -5mA, CE E Gain-Bandwidth Product* f 250 MHz T f = 100MHz * Transistor - For Reference Only DDTC (R2-ONLY SERIES) CA DS30332 Rev. 6 - 2 2 of 4 Diodes Incorporated www.diodes.com NEW PRODUCT