DDTD (xxxx) C NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1, R2 Moisture Sensitivity: Level 1 per J-STD-020D Lead, Halogen and Antimony Free, RoHS Compliant Terminal Connections: See Diagram Gree Device (Notes 2 and 3) Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Part Number R1 (NOM) R2 (NOM) Marking Marking Information: See Table and Page 3 DDTD113EC 1K 1K N60 Ordering Information: See Page 3 DDTD123EC 2.2K 2.2K N61 DDTD143EC 4.7K 4.7K N62 Weight: 0.008 grams (approximate) DDTD114EC 10K 10K N63 DDTD122JC 0.22K 4.7K N64 OUT DDTD113ZC 1K 10K N65 DDTD123YC 2.2K 10K N66 3 DDTD133HC 3.3K 10K N67 C DDTD123TC 2.2K OPEN N69 DDTD143TC 4.7K OPEN N70 R1 B DDTD114TC 10K OPEN N71 DDTD114GC 0 10K N72 R2 E 1 2 GND(0) IN Top View Package Pin Out Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (3) to (2) V 50 V CC Input Voltage, (1) to (2) DDTD113EC -10 to +10 DDTD123EC -10 to +12 DDTD143EC -10 to +30 DDTD114EC -10 to +40 V V IN DDTD122JC -5 to +5 DDTD113ZC -5 to +10 DDTD123YC -5 to +12 DDTD133HC -6 to +20 Input Voltage, (2) to (1) DDTD123TC DDTD143TC V 5 V EBO(MAX) DDTD114TC DDTD114GC Output Current All I 500 mA C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at DDTD (xxxx) C Electrical Characteristics - R1, R2 Types T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition DDTD113EC 0.5 DDTD123EC 0.5 DDTD143EC 0.5 DDTD114EC 0.5 V V V = 5V, I = 100A l(OFF) CC O DDTD122JC 0.5 DDTD113ZC 0.3 DDTD123YC 0.3 DDTD133HC 0.3 Input Voltage V = 0.3V, I = 20mA O O DDTD113EC 3.0 V = 0.3V, I = 20mA O O DDTD123EC 3.0 V = 0.3V, I = 20mA DDTD143EC 3.0 O O DDTD114EC 3.0 V = 0.3V, I = 10mA O O V V l(ON) DDTD122JC 3.0 V = 0.3V, I = 30mA O O DDTD113ZC 2.0 V = 0.3V, I = 20mA O O DDTD123YC 2.0 V = 0.3V, I = 20mA O O DDTD133HC 2.0 V = 0.3V, I = 20mA O O Output Voltage V 0.3V V I /I = -50mA/-2.5mA O(ON) O l DDTD113EC 7.2 DDTD123EC 3.8 DDTD143EC 1.8 DDTD114EC 0.88 Input Current I mA V = 5V l I DDTD122JC 28 DDTD113ZC 7.2 DDTD123YC 3.6 DDTD133HC 2.4 Output Current 0.5 I A V = 50V, V = 0V O(OFF) CC I DDTD113EC 33 DDTD123EC 39 DDTD143EC 47 DDTD114EC 56 DC Current Gain G V = 5V, I = 50mA l O O DDTD122JC 47 DDTD113ZC 56 DDTD123YC 56 DDTD133HC 56 Input Resistor Tolerance R -30 +30 % 1 Resistance Ratio Tolerance (R /R ) -20 +20 % 2 1 V = 10V, I = 5mA, CE E Gain-Bandwidth Product* f 200 MHz T f = 100MHz Electrical Characteristics - R1 Only, R2 Only Types T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage BV 40 V I = 1mA CEO C I = 50A E Emitter-Base Breakdown Voltage DDTD123TC DDTD143TC I = 50A E 5 V BV EBO DDTD114TC I = 50A E DDTD114GC I = 720A E Collector Cutoff Current I 0.5 A V = 50V CBO CB DDTD123TC 0.5 DDTD143TC 0.5 Emitter Cutoff Current A I V = 4V EBO EB DDTD114TC 0.5 DDTD114GC 580 300 Collector-Emitter Saturation Voltage 0.3 V V I = 50mA, I = 2.5mA CE(SAT) C B DDTD123TC 100 250 600 DDTD143TC 100 250 600 DC Current Transfer Ratio h I = 50mA, V = 5V FE C CE 250 600 DDTD114TC 100 DDTD114GC 56 Bias Resistor Tolerance R or R -30 +30 % 1 2 V = 10V, I = -5mA, CE E Gain-Bandwidth Product* 200 MHz f T f = 100MHz * Transistor - For Reference Only 2 of 4 January 2009 DDTD (xxxx) C Diodes Incorporated www.diodes.com Document number: DS30384 Rev. 10 - 2