DDTD (xxxx) C
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR
Features Mechanical Data
Epitaxial Planar Die Construction Case: SOT-23
Complementary PNP Types Available (DDTB) Case Material: Molded Plastic, Green Molding Compound,
Note 3. UL Flammability Classification Rating 94V-0
Built-In Biasing Resistors, R1, R2
Moisture Sensitivity: Level 1 per J-STD-020D
Lead, Halogen and Antimony Free, RoHS Compliant
Terminal Connections: See Diagram
Gree Device (Notes 2 and 3)
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Part Number R1 (NOM) R2 (NOM) Marking
Marking Information: See Table and Page 3
DDTD113EC 1K 1K N60
Ordering Information: See Page 3
DDTD123EC 2.2K 2.2K N61
DDTD143EC 4.7K 4.7K N62
Weight: 0.008 grams (approximate)
DDTD114EC 10K 10K N63
DDTD122JC 0.22K 4.7K N64
OUT
DDTD113ZC 1K 10K N65
DDTD123YC 2.2K 10K N66
3
DDTD133HC 3.3K 10K N67
C
DDTD123TC 2.2K OPEN N69
DDTD143TC 4.7K OPEN N70
R1
B
DDTD114TC 10K OPEN N71
DDTD114GC 0 10K N72
R2
E
1 2
GND(0)
IN
Top View
Package Pin Out Configuration
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2) V 50 V
CC
Input Voltage, (1) to (2) DDTD113EC -10 to +10
DDTD123EC -10 to +12
DDTD143EC -10 to +30
DDTD114EC -10 to +40
V V
IN
DDTD122JC -5 to +5
DDTD113ZC -5 to +10
DDTD123YC -5 to +12
DDTD133HC -6 to +20
Input Voltage, (2) to (1) DDTD123TC
DDTD143TC
V 5 V
EBO(MAX)
DDTD114TC
DDTD114GC
Output Current All I 500 mA
C
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation P 200 mW
D
Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W
R
JA
Operating and Storage Temperature Range -55 to +150
T , T C
J STG
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at
DDTD (xxxx) C
Electrical Characteristics - R1, R2 Types @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
DDTD113EC 0.5
DDTD123EC 0.5
DDTD143EC 0.5
DDTD114EC 0.5
V V V = 5V, I = 100A
l(OFF) CC O
DDTD122JC 0.5
DDTD113ZC 0.3
DDTD123YC 0.3
DDTD133HC 0.3
Input Voltage
V = 0.3V, I = 20mA
O O
DDTD113EC 3.0
V = 0.3V, I = 20mA
O O
DDTD123EC 3.0
V = 0.3V, I = 20mA
DDTD143EC 3.0 O O
DDTD114EC 3.0 V = 0.3V, I = 10mA
O O
V V
l(ON)
DDTD122JC 3.0
V = 0.3V, I = 30mA
O O
DDTD113ZC 2.0
V = 0.3V, I = 20mA
O O
DDTD123YC 2.0
V = 0.3V, I = 20mA
O O
DDTD133HC 2.0
V = 0.3V, I = 20mA
O O
Output Voltage V 0.3V V I /I = -50mA/-2.5mA
O(ON) O l
DDTD113EC 7.2
DDTD123EC 3.8
DDTD143EC 1.8
DDTD114EC 0.88
Input Current I mA V = 5V
l I
DDTD122JC 28
DDTD113ZC 7.2
DDTD123YC 3.6
DDTD133HC 2.4
Output Current 0.5
I A V = 50V, V = 0V
O(OFF) CC I
DDTD113EC 33
DDTD123EC 39
DDTD143EC 47
DDTD114EC 56
DC Current Gain
G V = 5V, I = 50mA
l O O
DDTD122JC 47
DDTD113ZC 56
DDTD123YC 56
DDTD133HC 56
Input Resistor Tolerance R -30 +30 %
1
Resistance Ratio Tolerance (R /R ) -20 +20 %
2 1
V = 10V, I = 5mA,
CE E
Gain-Bandwidth Product* f 200 MHz
T
f = 100MHz
Electrical Characteristics - R1 Only, R2 Only Types @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV 50 V I = 50A
CBO C
Collector-Emitter Breakdown Voltage BV 40 V I = 1mA
CEO C
I = 50A
E
Emitter-Base Breakdown Voltage DDTD123TC
DDTD143TC I = 50A
E
5 V
BV
EBO
DDTD114TC
I = 50A
E
DDTD114GC
I = 720A
E
Collector Cutoff Current I 0.5 A V = 50V
CBO CB
DDTD123TC 0.5
DDTD143TC 0.5
Emitter Cutoff Current A
I V = 4V
EBO EB
DDTD114TC 0.5
DDTD114GC 580
300
Collector-Emitter Saturation Voltage 0.3 V
V I = 50mA, I = 2.5mA
CE(SAT) C B
DDTD123TC 100 250 600
DDTD143TC 100 250 600
DC Current Transfer Ratio h I = 50mA, V = 5V
FE C CE
250 600
DDTD114TC 100
DDTD114GC 56
Bias Resistor Tolerance R or R -30 +30 %
1 2
V = 10V, I = -5mA,
CE E
Gain-Bandwidth Product* 200 MHz
f
T
f = 100MHz
* Transistor - For Reference Only
2 of 4 January 2009
DDTD (xxxx) C
Diodes Incorporated
www.diodes.com
Document number: DS30384 Rev. 10 - 2