DDTD (xxxx) U NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTB) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant Version (Note 2) B 1.15 1.35 B C Gree Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 Nominal E 0.30 0.40 G Case: SOT-323 G 1.20 1.40 Case Material: Molded Plastic,Gree Molding H Compound, Note 4. UL Flammability Classification H 1.80 2.20 Rating 94V-0 K J 0.0 0.10 M Moisture Sensitivity: Level 1 per J-STD-020C K 0.90 1.00 Terminals: Solderable per MIL-STD-202, Method 208 L 0.25 0.40 J Terminal Connections: See Diagram D E L M 0.10 0.18 Lead Free Plating (Matte Tin Finish annealed over 0 8 Alloy 42 leadframe). Marking Information: See Table Below & Page 3 All Dimensions in mm OUT Ordering Information: See Page 3 3 Weight: 0.006 grams (approximate) C R1 B P/N R1 (NOM) R2 (NOM) MARKING DDTD113EU 1K 1K N60 R2 DDTD123EU 2.2K 2.2K N61 DDTD143EU 4.7K 4.7K N62 E DDTD114EU 10K 10K N63 1 2 DDTD122JU 0.22K 4.7K N64 DDTD113ZU 1K 10K N65 GND(0) IN DDTD123YU 2.2K 10K N66 Schematic and Pin Configuration DDTD133HU 3.3K 10K N67 DDTD123TU 2.2K OPEN N69 DDTD143TU 4.7K OPEN N70 DDTD114TU 10K OPEN N71 DDTD114GU 0 10K N72 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (3) to (2) V 50 V CC Input Voltage, (1) to (2) DDTD113EU -10 to +10 DDTD123EU -10 to +12 DDTD143EU -10 to +30 DDTD114EU -10 to +40 V V IN DDTD122JU -5 to +5 DDTD113ZU -5 to +10 DDTD123YU -5 to +12 DDTD133HU -6 to +20 Input Voltage, (2) to (1) DDTD123TU DDTD143TU V 5 V EBO (MAX) DDTD114TU DDTD114GU Output Current All I 500 mA C Power Dissipation P 200 mW d Thermal Resistance, Junction to Ambient Air (Note 1) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDTD113EU 0.5 DDTD123EU 0.5 DDTD143EU 0.5 DDTD114EU 0.5 V V V = 5V, I = 100A l(off) CC O DDTD122JU 0.5 DDTD113ZU 0.3 DDTD123YU 0.3 DDTD133HU 0.3 Input Voltage DDTD113EU 3.0 V = 0.3V, I = 20mA O O DDTD123EU 3.0 V = 0.3V, I = 20mA O O DDTD143EU 3.0 V = 0.3V, I = 20mA O O DDTD114EU 3.0 V = 0.3V, I = 10mA O O V V l(on) DDTD122JU 3.0 V = 0.3V, I = 30mA O O DDTD113ZU 2.0 V = 0.3V, I = 20mA O O DDTD123YU 2.0 V = 0.3V, I = 20mA O O DDTD133HU 2.0 V = 0.3V, I = 20mA O O Output Voltage 0.3V V V I /I = 50mA/2.5mA O(on) O l DDTD113EU 7.2 DDTD123EU 3.8 DDTD143EU 1.8 DDTD114EU 0.88 Input Current I mA V = 5V l I DDTD122JU 28 DDTD113ZU 7.2 DDTD123YU 3.6 DDTD133HU 2.4 Output Current 0.5 I A V = 50V, V = 0V O(off) CC I DDTD113EU 33 DDTD123EU 39 DDTD143EU 47 DDTD114EU 56 DC Current Gain G V = 5V, I = 50mA l O O DDTD122JU 47 DDTD113ZU 56 DDTD123YU 56 DDTD133HU 56 Gain-Bandwidth Product* 200 MHz f V = 10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1-Only, R2-Only Types A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage 40 V BV I = 1mA CEO C I = 50A Emitter-Base Breakdown Voltage DDTD123TU E DDTD143TU I = 50A E BV 5 V EBO DDTD114TU I = 50A E DDTD114GU I = 720A E Collector Cutoff Current I 0.5 A V = 50V CBO CB DDTD123TU 0.5 DDTD143TU 0.5 Emitter Cutoff Current I A V = 4V EBO EB DDTD114TU 0.5 DDTD114GU 580 300 Collector-Emitter Saturation Voltage V 0.3 V I = 50mA, I = 2.5mA CE(sat) C B 250 600 DDTD123TU 100 250 600 DDTD143TU 100 DC Current Transfer Ratio h I = 5mA, V = 5V FE C CE DDTD114TU 100 250 600 DDTD114GU 56 Gain-Bandwidth Product* f 200 MHz V = 10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only DS30382 Rev. 7 - 2 2 of 3 DDTD (xxxx) U Diodes Incorporated www.diodes.com