DESD1LIN2WSQ LIN-BUS BIDIRECTIONAL TVS DIODE Product Summary Features and Benefits V I C Provides ESD Protection per IEC 61000-4-2 Standard: BR (min) PP (max) T (typ) 25.4V & 17.1V 3A 13pF Air 30kV, Contact 30kV 1 Channel of ESD Protection Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This DESD1LIN2WSQ is a next generation ESD and surge protection Case: SOD323 device packaged in a small footprint surface mount package. It is Case Material: Molded Plastic, Green Molding Compound. qualified to AECQ101, supported by a PPAP and is designed to UL Flammability Classification Rating 94V-0 protect one data line of the Local Information Network (LIN) in an Moisture Sensitivity: Level 1 per J-STD-020 automotive. Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe e3 (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 LIN Bus protection Weight: 0.005 grams (Approximate) SOD323 1 2 Top View Device Schematic Ordering Information (Note 5) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DESD1LIN2WSQ-7 Automotive A24 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DESD1LIN2WSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation 160 W 8/20s, Per Figure 1 P PP Peak Pulse Current 3.0 A 8/20s, Per Figure 1 I PP ESD Protection Contact Discharge 30 kV Standard IEC 61000-4-2 V ESD Contact ESD Protection Air Discharge 30 kV Standard IEC 61000-4-2 V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 6) 250 mW P D Thermal Resistance, Junction to Ambient (Note 6) R 500 C/W JA Operating and Storage Temperature Range -65 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage, from Pin 1 to Pin 2 - - 15 V - V RWM1 Reverse Standoff Voltage, from Pin 2 to Pin 1 - - 24 V - V RWM2 Channel Leakage Current, from Pin 1 to Pin 2 - 1 50 nA I V = 15V RM1 RWM (Note 7) Channel Leakage Current, from Pin 2 to Pin 1 I - 1 50 nA V = 24V RM2 RWM (Note 7) Breakdown Voltage, from Pin 1 to Pin 2 V 17.1 18.9 20.3 V I = 1mA BR1 R Breakdown Voltage, from Pin 1 to Pin 1 V 25.4 27.8 30.3 V I = 1mA BR2 R - - 25 V I = 1A, tp = 8/20S PP Clamping Voltage, from Pin 1 to Pin 2 V CL1 - - 35 V I = 5A, tp = 8/20S PP - - 40 V I = 1A, tp = 8/20S PP Clamping Voltage, from Pin 2 to Pin 1 V CL2 - - 50 V I = 3A, tp = 8/20S PP Differential Resistance - 0.5 - R I = 1A, tp = 8/20S DIF R Channel Input Capacitance - 13 17 pF C V = 0V, f = 1MHz T R Notes: 6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at