DESD3V3S1BL LOW CAPACITANCE BIDIRECTIONAL TVS DIODES Features Mechanical Data Low Profile Package (0.53mm max) and Ultra-Small PCB Case: X1-DFN1006-2 Footprint Area (1.08 * 0.68mm max) Suitable for Compact Case Material: Molded Plastic, Green Molding Compound Portable Electronics UL Flammability Classification Rating 94V-0 Provides ESD Protection per IEC 61000-4-2 Standard: Moisture Sensitivity: Level 1 per J-STD-020 Air 30kV, Contact 25kV Terminals: NiPdAu over Copper Leadframe. Solderable per MIL- e4 1 Channel of ESD Protection STD-202, Method 208 Low Channel Input Capacitance Polarity: Cathode Band Typically Used in Cellular Handsets, Portable Electronics, Weight: 0.001 grams (Approximate) Communication Systems, Computers and Peripherals Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) X1-DFN1006-2 Bottom View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel size(inches) Tape width(mm) Quantity per reel DESD3V3S1BL-7B Standard RH 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DESD3V3S1BL Maximum Ratings ( T = +25C unless otherwise specified) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 35 W 8/20s, Per Figure 3 PP Peak Pulse Current I 5 A 8/20s, Per Figure 3 PP ESD Protection Contact Discharge V 25 kV IEC 61000-4-2 Standard ESD Contact ESD Protection Air Discharge V 30 kV IEC 61000-4-2 Standard ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) P 250 mW D Thermal Resistance, Junction to Ambient (Note 5) R 500 C/W JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C unless otherwise specified) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 3.3 V V RWM Channel Leakage Current (Note 6) 10 100 nA I V = 3.3V RM RWM 4.5 5.4 I = 1A, tp = 8/20S PP Clamping Voltage, Positive Transients V V CL 5.8 7.0 I = 5A, tp = 8/20S PP Breakdown Voltage V 3.8 6.5 V I = 1mA BR R Differential Resistance 0.3 RDIF IR = 1A Channel Input Capacitance 10 13 pF C V = 0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at