DESD3V3Z1BCSF LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Product Summary Features V I C BR MIN PP MAX IN TYP Provides ESD Protection per IEC 61000-4-2 Standard: 5V 3A 0.17pF Air 8kV,Contact 8kV 1 Channel of ESD Protection Description Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications Mechanical Data such as USB3.1 and Thunderbolt 3. Case: X2-DSN0603-2 Applications Case Material: Chip Scale Package Moisture Sensitivity: Level 1 per J-STD-020 USB3.1 Terminals: NiAu Bump. Solderable per MIL-STD-202, Method 208 Thunderbolt 3 e4 Computers and Peripheral Weight: 0.0002 grams (Approximate) X2-DSN0603-2 Pin 2 Pin 1 Top View Device Schematic Bottom View Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DESD3V3Z1BCSF-7 Standard MZ 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DESD3V3Z1BCSF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Condition Peak Pulse Power Dissipation P 25 W 8/20s, per Figure 3 PP Peak Pulse Current I 3 A 8/20s, per Figure 3 PP ESD Protection Air Discharge V 8 kV IEC61000-4-2 Standard ESD AIR ESD Protection Contact Discharge V 8 kV IEC61000-4-2 Standard ESD CONTACT Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) P 250 mW D Thermal Resistance, Junction to Ambient (Note 5) 500 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ. Max Unit Test Conditions Reverse Standoff Voltage V 3.3 V RWM Channel Leakage Current (Note 6) I 1 A V = 3.3V RM RWM 4.5 I = 3A, t = 8/20s PP P Clamping Voltage V 6.0 V I = 8A,TLP, t = 100ns CL PP P 11.5 I = 16A,TLP, t = 100ns PP P 5 Breakdown Voltage V 9 V I = 1mA BR R Differential Resistance 0.4 R TLP, 10A, t = 100ns DYN P Channel Input Capacitance 0.17 0.25 pF C V = 0V, f = 1MHz IN R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at