DESD5V0S1BLD LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data Case: X2-DFN1006-2 Provides ESD Protection per IEC 61000-4-2 Standard: Air 30kV, Contact 30kV Case Material: Molded Plastic, Green Molding Compound. UL Ultra Low Profile (0.4mm), Ideal for Thin Portable Electronics Flammability Classification Rating 94V-0 1 Channel of ESD Protection Moisture Sensitivity: Level 1 per J-STD-020 High Peak Pulse Current per IEC 61000-4-5 Standard Terminals: NiPdAu over Copper leadframe. Solderable per MIL- STD-202, Method 208 Low Channel Input Capacitance Weight: 0.001 grams (approximate) Typically Used in Cellular Handsets, Portable Electronics, Communication Systems, Computers and Peripherals Lead Free/RoHS Compliant (Note 1) Halogen and Antimony FreeGree Device (Notes 2 & 3) X2-DFN1006-2 Pin 1 Pin 2 Bottom View Device Schematic Ordering Information (Note 4) Part Number Case Packaging DESD5V0S1BLD-7B X2-DFN1006-2 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. 2. Halogen and Antimony freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. Diodes Inc. sGree policy can be found on our website at DESD5V0S1BLD Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation 130 W P 8/20s, Per Fig. 1 PP Peak Pulse Current 12 A I 8/20s, Per Fig. 1 PP ESD Protection Contact Discharge 30 kV IEC 61000-4-2 Standard V ESD Contact ESD Protection Air Discharge 30 kV IEC 61000-4-2 Standard V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient (Note 5) 500 C/W R JA Operating and Storage Temperature Range -65 to +150 T , T C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage - - 5 V - V RWM Channel Leakage Current (Note 6) - 5 100 nA I V = 5V RM RWM - - 10 I = 1A, t = 8/20 S PP p Clamping Voltage V V CL - - 14 I = 12A, t = 8/20 S PP p Breakdown Voltage V 5.5 - 9.5 V I = 1mA BR R Differential Resistance R - 0.4 - I = 10A, t = 8/20S DIF R p Channel Input Capacitance C - 35 45 pF V = 0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at