DESDALC5LP
1 CHANNEL BIDIRECTIONAL TVS DIODE
Product Summary Features
V I I Low Profile Package (0.53mm max) and Ultra-small PCB Footprint
BR (min) PP (max) R (max)
5.8V and 11V 9A 25nA
Area (1.08 * 0.68mm max) Suitable for Compact Portable
Electronics
Description Provides ESD Protection per IEC 61000-4-2 Standard:
Air 30kV, Contact 30kV
This new generation TVS is designed to protect sensitive electronics
1 Channel of ESD Protection
from the damage due to ESD. The combination of small size and high
Low Channel Input Capacitance
ESD surge capability makes it ideal for use in portable applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
such as cellular phones, digital cameras, and MP3 players.
Halogen and Antimony Free. Green Device (Note 3)
Applications
Mechanical Data
Cellular Handsets
Case: X1-DFN1006-2
Portable Electronics
Case Material: Molded Plastic, Green Molding Compound. UL
Computers and Peripheral
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
STD-202, Method 208 e4
Weight: 0.001 grams (approximate)
X1-DFN1006-2
Bottom View Device Schematic
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DESDALC5LP-7B Standard Q3 7 8 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DESDALC5LP
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P 150 W 8/20s
PP
Peak Pulse Current I 9 A 8/20s
PP
ESD Protection Contact Discharge V 30 kV IEC 61000-4-2 Standard
ESD_Contact
ESD Protection Air Discharge V 30 kV IEC 61000-4-2 Standard
ESD_Air
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P 250 mW
D
Thermal Resistance, Junction to Ambient (Note 5) 500 C/W
R
JA
Operating and Storage Temperature Range T , T -65 to +150 C
J STG
Electrical Characteristics (@T = +25C unless otherwise specified)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
11 13 17 I = 1mA, pin1 to pin2
R
Reverse Breakdown Voltage V V
BR
5.8 8 11
I = 1mA, pin2 to pin1
R
Reverse Current (Note 6) 25 nA
I V = 5V
R R
Dynamic Resistance, from Pin 1 to Pin 2 0.19
R I = 1A to 20A, t = 100ns
DYN TLP P
Dynamic Resistance, from Pin 2 to Pin 1 0.19
R I = 1A to 20A, t = 100ns
DYN TLP P
Capacitance C 26 30 pF V = 0V, f = 1MHz
T R
8kV contact discharge after 30ns
Clamping Voltage, from Pin 1 to Pin 2 21 V
V
CL
IEC61000-4-2
8kV contact discharge after 30ns
Clamping Voltage, from Pin 2 to Pin 1 12 V
V
CL
IEC61000-4-2
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at