DIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Mechanical Data Epitaxial Planar Die Construction Case: SC-74R Built-In Biasing Resistors Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 One 500mA PNP and One 100mA NPN Moisture Sensitivity: Level 1 per J-STD-020 Lead Free/RoHS Compliant (Note 1) Terminal Connections: See Diagram Green Devices (Note 2) Terminals: Finish - Matte Tin Finish annealed over Copper Qualified to AEC-Q101 Standards for High Reliability leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Table and Page 3 Part Number R1 R2 Marking Ordering Information: See Page 3 Tr1 0.1K 10K DIMD10A C73 Tr2 10K - Weight: 0.015 grams (approximate) R T 1 R r2 2 T R r1 1 Device Schematic Maximum Ratings PNP Section Tr1 T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage V -50 V CC Input Voltage V -5 to +5 V IN Output Current I -500 mA O Maximum Ratings NPN Section Tr2 T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 50 V V CBO Collector-Emitter Voltage 50 V V CEO Emitter-Base Voltage 5 V V EBO Collector Current I 100 mA C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation P 300* mW D Operating and Storage Temperature Range T , T -55 to +150 C J STG * Not to exceed 200mW for either Tr1 or Tr2. Electrical Characteristics PNP Section Tr1 T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition -0.3 V V = -5V, I = -100A l(off) CC O Input Voltage V -1.5 V V = 0.3, I = -100mA l(on) O O Output Voltage -0.1 -0.3 V V I = -100mA/-5mA O(on) O Input Current -25 mA I V = -2V l I Output Current I -0.5 A V = -50V, V = 0V O(off) CC I DC Current Gain 68 G l Gain-Bandwidth Product* 200 MHz f V = -10V, I = -50mA, f = 100MHz T CE E * Transistor - For Reference Only Notes: 1. No purposefully added lead. 2. Green devices, Halogen and Antimony Free, Diodes Incs Green Policy can be found on our website at DIMD10A Electrical Characteristics NPN Section Tr2 T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage BV 50 V I = 1mA CEO C Emitter-Base Breakdown Voltage 5 V BV I = 50A EBO E Collector Cutoff Current 0.5 I A V = 50V CBO CB Emitter Cutoff Current 0.5 A I V = 4V EBO EB Collector-Emitter Saturation Voltage V 0.3 V I /I = 10mA / 1.0mA CE(SAT) C B DC Current Transfer Ratio h 100 250 600 I = 1mA, V = 5V FE C CE Gain-Bandwidth Product (Note 3) f 250 MHz T V = 10V, I = -5mA, f = 100MHz CE E Notes: 3. Transistor - For Reference Only Typical Curves - Tr2 250 1,000 V = 10 CE 200 100 150 100 10 50 0 1 -50 110 100 050 100 150 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (C) C A Fig. 2 Typical DC Current Gain vs. Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature 1 4 I/I = 10 CB I = 0mA E 3 0.1 75C -25C 2 25C 0.01 C obo 1 0.001 0 10 20 40 0 10 15 25 30 0 30 50 5 20 I , COLLECTOR CURRENT (mA) V , REVERSE VOLTAGE (V) R C Fig. 4 Typical Capacitance Characteristics Fig. 3 Typical Collector Emitter Saturation Voltage vs. Collector Current 2 of 4 September 2010 DIMD10A Diodes Incorporated www.diodes.com Document number: DS30391 Rev. 5 - 2 V, COLLECTOR EMITTER CE(SAT) P , POWER DISSIPATION (mW) D SATURATION VOLTAGE (V) h, DC CURRENT GAIN (NORMALIZED) CAPACITANCE (pF) FE