DRD (xxxx) W COMPLEX ARRAY FOR RELAY DRIVERS Features A Epitaxial Planar Die Construction SOT-363 One Transistor and One Switching Diode in One Package Dim Min Max Lead Free By Design/RoHS Compliant (Note 1) A 0.10 0.30 Gree Device (Note 2) B C B 1.15 1.35 Mechanical Data C 2.00 2.20 Case: SOT-363 D 0.65 Nominal Case Material: Molded Plastic.Gree Molding F 0.30 0.40 Compound. UL Flammability Classification Rating 94V-0 H H 1.80 2.20 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram K J 0.10 M Terminals: Finish - Matte Tin annealed over Alloy 42 K 0.90 1.00 leadframe. Solderable per MIL-STD-202, Method 208 L 0.25 0.40 J Marking Information: See Page 8 D F L Ordering Information: See Page 8 M 0.10 0.25 Weight: 0.008 grams (approximate) 8 0 All Dimensions in mm P/N R1 (NOM) R2 (NOM) R2 DRDNB16W 1K 10K R2 R1 R1 DRDPB16W 1K 10K DRDNB26W 220 4.7K DRDPB26W 220 4.7K DRDN010W/ DRDP006W DRDNB16W/ DRDPB16W/ DRDN005W DRDNB26W DRDPB26W Maximum Ratings, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 3) 200 mW P D Thermal Resistance, Junction to Ambient Air (Note 3) 625 R C/W JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Maximum Ratings, DRDN010W NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 45 V V CBO Collector-Emitter Voltage 18 V V CEO Emitter-Base Voltage 5 V V EBO Collector Current (Note 3) 1000 mA I C Maximum Ratings, DRDN005W NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 4.0 V EBO Collector Current Continuous (Note 3) 500 mA I C Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Maximum Ratings, DRDP006W PNP Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -60 V V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current (Note 3) I -600 mA C Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage V 50 V CC Input Voltage V -5 to +10 V IN Output Current 600 mA I C Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage 50 V V CC Input Voltage -5 to +5 V V IN Output Current 600 mA I C Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage V -50 V CC Input Voltage V +5 to -10 V IN Output Current I 600 mA C Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage V -50 V CC Input Voltage +5 to -5 V V IN Output Current -600 mA I C Maximum Ratings, Switching Diode T = 25C unless otherwise specified A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage 100 V V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 75 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 53 V R(RMS) Forward Continuous Current (Note 3) 500 mA I FM Average Rectified Output Current (Note 3) 250 mA I O Non-Repetitive Peak Forward Surge Current t = 1.0s 4.0 A I FSM t = 1.0s 2.0 DS30573 Rev. 10 - 2 2 of 9 DRD (xxxx) W Diodes Incorporated www.diodes.com