DRD (xxxx) W
COMPLEX ARRAY FOR RELAY DRIVERS
Features
A
Epitaxial Planar Die Construction
SOT-363
One Transistor and One Switching Diode in One Package
Dim Min Max
Lead Free By Design/RoHS Compliant (Note 1)
A 0.10 0.30
Gree Device (Note 2)
B C
B 1.15 1.35
Mechanical Data
C 2.00 2.20
Case: SOT-363
D 0.65 Nominal
Case Material: Molded Plastic.Gree Molding
F 0.30 0.40
Compound. UL Flammability Classification Rating 94V-0 H
H 1.80 2.20
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram K
J 0.10
M
Terminals: Finish - Matte Tin annealed over Alloy 42
K 0.90 1.00
leadframe. Solderable per MIL-STD-202, Method 208
L 0.25 0.40
J
Marking Information: See Page 8
D F L
Ordering Information: See Page 8 M 0.10 0.25
Weight: 0.008 grams (approximate)
8
0
All Dimensions in mm
P/N R1 (NOM) R2 (NOM)
R2
DRDNB16W 1K 10K R2
R1
R1
DRDPB16W 1K 10K
DRDNB26W 220 4.7K
DRDPB26W 220 4.7K
DRDN010W/ DRDP006W DRDNB16W/ DRDPB16W/
DRDN005W DRDNB26W
DRDPB26W
Maximum Ratings, Total Device @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 3) 200 mW
P
D
Thermal Resistance, Junction to Ambient Air (Note 3) 625
R C/W
JA
Operating and Storage Temperature Range -55 to +150
T , T C
J STG
Maximum Ratings, DRDN010W NPN Transistor @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage 45 V
V
CBO
Collector-Emitter Voltage 18 V
V
CEO
Emitter-Base Voltage 5 V
V
EBO
Collector Current (Note 3) 1000 mA
I
C
Maximum Ratings, DRDN005W NPN Transistor @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage V 80 V
CBO
Collector-Emitter Voltage V 80 V
CEO
Emitter-Base Voltage V 4.0 V
EBO
Collector Current Continuous (Note 3) 500 mA
I
C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'sGree policy can be found on our website at
Maximum Ratings, DRDP006W PNP Transistor @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage -60 V
V
CBO
Collector-Emitter Voltage V -60 V
CEO
Emitter-Base Voltage V -5.0 V
EBO
Collector Current (Note 3) I -600 mA
C
Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage V 50 V
CC
Input Voltage V -5 to +10 V
IN
Output Current 600 mA
I
C
Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage 50 V
V
CC
Input Voltage -5 to +5 V
V
IN
Output Current 600 mA
I
C
Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage V -50 V
CC
Input Voltage V +5 to -10 V
IN
Output Current I 600 mA
C
Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Supply Voltage V -50 V
CC
Input Voltage +5 to -5 V
V
IN
Output Current -600 mA
I
C
Maximum Ratings, Switching Diode @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage 100 V
V
RM
V
Peak Repetitive Reverse Voltage
RRM
Working Peak Reverse Voltage 75 V
V
RWM
DC Blocking Voltage
V
R
RMS Reverse Voltage V 53 V
R(RMS)
Forward Continuous Current (Note 3) 500 mA
I
FM
Average Rectified Output Current (Note 3) 250 mA
I
O
Non-Repetitive Peak Forward Surge Current @ t = 1.0s 4.0
A
I
FSM
@ t = 1.0s 2.0
DS30573 Rev. 10 - 2 2 of 9 DRD (xxxx) W
Diodes Incorporated
www.diodes.com