DRTR5V0U1LP LOW CAPACITANCE SINGLE ESD PROTECTION TVS DIODE Features Mechanical Data IEC 61000-4-2 (ESD): Air 15kV, Contact 8kV Case: X1-DFN1006-2 1 Channel of ESD Protection Case Material: Molded Plastic,Gree Molding Compound. UL Low Channel Input Capacitance of 1.0pF Typical Flammability Classification Rating 94V-0 Low Profile Package (0.53mm max) and Ultra-small PCB Moisture Sensitivity: Level 1 per J-STD-020 Footprint Area (1.08 * 0.68mm max) Suitable for Compact Terminals: NiPdAu over Copper leadframe. Solderable per MIL- e4 Portable Electronics STD-202, Method 208 Typically Used at High Speed Ports such as USB 2.0, Weight: 0.001 grams (Approximate) IEEE1394, Serial ATA, DVI, HDMI, PCI Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Pin 1 X1-DFN1006-2 Pin 2 Bottom View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel size(inches) Tape width(mm) Quantity per reel DRTR5V0U1LP-7B AEC-Q101 U6 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DRTR5V0U1LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current I 5 A 8/20 s, Per Figure 3 PP ESD Protection Contact Discharge V 8 kV Standard IEC 61000-4-2 ESD Contact ESD Protection Air Discharge V 15 kV Standard IEC 61000-4-2 ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient (Note 5) 500 R C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage VRWM 5.5 V Reverse Current (Note 6) I 1 100 nA V = 3.0V R R Reverse Breakdown Voltage VBR 6.0 V I = 1mA R Forward Voltage V 0.8 V I = 1mA F F Reverse Clamping Voltage, Positive Transients 10.0 V V I = 1A, t = 8/20s CL1 PP p Reverse Clamping Voltage, Negative Transients -1.7 V V I = -1A, t = 8/20s CL2 PP p Dynamic Resistance 0.9 R I = 1A, t = 8/20s DYN R p Capacitance C 1.0 1.5 pF V = 0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at