DRTR5V0U4LP16
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Product Summary Features
V I C
BR (min) PP (max) T (typ)
Provides ESD Protection per IEC 61000-4-2 Standard:
6V 6A 1.0pF
Air 30kV, Contact 30kV
4 Channels of ESD Protection
Description
Low Channel Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
This new generation TVS is designed to protect sensitive electronics
Halogen and Antimony Free. Green Device (Note 3)
from the damage due to ESD. The combination of small size and high
ESD surge capability makes it ideal for use in portable applications
Mechanical Data
such as cellular phones, digital cameras, and MP3 players.
Case: U-DFN1616-6
Applications
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Cellular Handsets
Moisture Sensitivity: Level 1 per J-STD-020
Portable Electronics
Terminals: NiPdAu over Copper Leadframe.
Computers and Peripheral
e4
Solderable per MIL-STD-202, Method 208
Weight: 0.002 grams (Approximate)
U-DFN1616-6
Bottom View
Top View Device Schematic
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DRTR5V0U4LP16-7 Standard SN 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DRTR5V0U4LP16
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current 6 A 8/20s (Note 7)
I
PP
Standard IEC 61000-4-2
ESD Protection Contact Discharge 30 kV
V
ESD_Contact
Standard IEC 61000-4-2
ESD Protection Air Discharge 30 kV
V
ESD_Air
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) 300 mW
P
D
417 C/W
Thermal Resistance, Junction to Ambient T = +25C R
A JA
Operating and Storage Temperature Range -55 to +150 C
T , T
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V 5.5 V
RWM
Channel Leakage Current (Note 6) I 100 nA V = 5V, Any I/O to GND
R R
Reverse breakdown voltage 6.0 V IR = 1mA, from pin 5 to pin 2
V
BR
Clamping Voltage, Positive Transients (Note 7) 10 12 V
V I = 1A, t = 8/20s
C PP p
V = 0V, f = 1MHz, Any I/O to
R
Channel Input Capacitance (Note 8) C 1.0 1.5 pF
T
GND
Dynamic Resistance R 0.9 I = 1A, t = 8/20s
DYN PP p
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at