DRTR5V0U4SL 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data IEC 61000-4-2 (ESD): Air 30kV, Contact 25kV Case: SOT363 4 Channels of ESD Protection Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Channel Input Capacitance of 0.8pF Typical Moisture Sensitivity: Level 1 per J-STD-020 Typically Used at High Speed Ports such as USB 2.0, IEEE1394, Serial ATA, DVI, HDMI, PCI Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.006 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) NC CH 4 CH 3 SOT363 65 4 Pin 1 Pin 2 Pin 4 Pin 5 12 3 Pin 3 CH 2 CH 1 GND Device Schematic Top View Device Pinout Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DRTR5V0U4SL-7 Standard TG5 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DRTR5V0U4SL Maximum Ratings ( T = +25C, unless otherwise specified) A Characteristic Symbol Value Unit Conditions Peak Pulse Current I 5 A 8/20 s, Per Figure 2 PP ESD Protection Contact Discharge 25 kV Standard IEC 61000-4-2 V ESD Contact ESD Protection Air Discharge V 30 kV Standard IEC 61000-4-2 ESD Air Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient (Note 5) R 625 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 5.5 V RWM Channel Leakage Current (Note 6, 7) I 1 10 nA V = 2.5V R R Reverse breakdown voltage V 7.0 9.5 V I = 1mA, from CH to GND BR R 10.5 V I = 1A, t = 8/20s PP p Clamping Voltage, Positive Transients V CL 12.5 V I = 3A, t = 8/20s PP p Forward Voltage 0.8 V V I = 1mA F F I = 10A to 20A, t = 100ns, I/O TLP p 0.8 to GND Dynamic Resistance R DYN I = 10A to 20A, t = 100ns, TLP p 0.6 GND to I/O I/O to GND Capacitance C 0.8 1.2 pF V = 2.5V, f = 1MHz (I/O-GND) (I/O-GND) Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at