DRTR5V0U4TS 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data IEC 61000-4-2 (ESD): Air 30kV, Contact 25kV Case: TSOT26 4 Channels of ESD Protection Case Material: Molded Plastic, Green Molding Compound. UL Low Channel Input Capacitance of 1.0pF Typical Flammability Classification Rating 94V-0 Typically Used at High Speed Ports such as USB 2.0, Moisture Sensitivity: Level 1 per J-STD-020 IEEE1394, Serial ATA, DVI, HDMI, PCI Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.013 grams (approximate) V TSOT26 I/O 4 I/O 3 CC 65 4 12 3 I/O 1 GND I/O 2 Top View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel size(inches) Tape width(mm) Quantity per reel DRTR5V0U4TS-7 AEC-Q101 TG2 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DRTR5V0U4TS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current I 5 A 8/20s, Per Figure 3 PP ESD Protection Contact Discharge V 25 kV Standard IEC 61000-4-2 ESD Contact ESD Protection Air Discharge V 30 kV Standard IEC 61000-4-2 ESD Air Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 300 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 417 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 5.5 V V RWM Channel Leakage Current (Note 6, 7) 1 100 nA I V = 3V R R Reverse breakdown voltage V 6.0 9.0 V I = 1mA, from pin 5 to pin 2 BR R Forward Voltage V 0.8 V I = 8mA F F Clamping Voltage, Positive Transients V 10.0 V I = 1A, t = 8/20s, I/O to GND CL1 PP p Clamping Voltage, Negative Transients V -1.7 V I = -1A, t = 8/20s, I/O to GND CL2 PP p Clamping Voltage, Positive Transients V 14.5 V I = 5A, t = 8/20s, I/O to GND CL1 PP p Clamping Voltage, Negative Transients V -5.0 V I = -5A, t = 8/20s, I/O to GND CL2 PP p Dynamic Resistance R 0.9 I = 1A, t = 8/20s DYN PP p I/O to GND Capacitance 1.0 1.5 pF C V = 0V, f = 1MHz (I/O-GND) (I/O-GND) I/O to I/O Capacitance 0.6 pF C V = 0V, f = 1MHz (I/O-I/O) (I/O-I/O) Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at