DT1042-04SO 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data Low Clamping Voltage, I/O to V Case: SOT26 SS Typical 9V at 10A 100ns, TLP Case Material: Molded Plastic, Green Molding Compound. Typical 7.7V at 6A 8 s/20 s UL Flammability Classification Rating 94V-0 IEC 61000-4-2 (ESD): Air +27/-19kV, Contact 16kV Moisture Sensitivity: Level 1 per J-STD-020 IEC 61000-4-4 (EFT): Level-4 Terminals: Matte Tin Finish annealed over Copper leadframe IEC 61000-4-5 (Lightning): 6A (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 4 Channels of ESD protection Weight: 0.016 grams (approximate) Low Channel Input Capacitance of 0.65pF Typical TLP Dynamic Resistance: 0.25 Typically Used for High Speed Ports such as USB 2.0, IEEE1394, HDMI, Laptop and Personal Computers, Flat Panel Displays, Video Graphics Displays, SIM Ports Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) I/O4 Vcc I/O3 SOT26 I/O1 Vss I/O2 Top View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DT1042-04SO-7 Standard BC1 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DT1042-04SO Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current, per IEC 61000-4-5 6 A I I/O to V , 8/20 s PP I/O SS Peak Pulse Power, per IEC 61000-4-5 55 W P I/O to V , 8/20 s PP I/O SS Operating Voltage (DC) 5.5 V V I/O to V DC SS ESD Protection Contact Discharge, per IEC 61000-4-2 V 16 kV I/O to V ESD I/O SS ESD Protection Air Discharge, per IEC 61000-4-2 V +27/-19 kV I/O to V ESD I/O SS Operating Temperature -55 to +85 C T OP Storage Temperature -55 to +150 C T STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) 300 mW P D Thermal Resistance, Junction to Ambient Typical (Note 5) 417 C/W R JA Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 5.0 V VRWM V to V CC SS Reverse Current (Note 6) I 1.0 A V = V = 5V, V to V R(Vcc to Vss) R RWM CC SS Reverse Current (Note 6) I 0.5 A V = V = 5V, any I/O to V R(IO to Vss) R RWM SS Reverse Breakdown Voltage 6.2 V VBR I = 1mA, V to V R CC SS Forward Clamping Voltage V -1.0 -0.8 V I = -15mA, V to V F F CC SS V 6.3 V I = 9A, V to V , 8/20 s C Vcc PP CC SS Reverse Clamping Voltage(Note 7) 7.7 9 V V I = 6A, I/O to V , 8/20 s C I/O PP SS V 6.8 V TLP, 10A, tp = 100 ns, V to V , per Fig. 8 ESD Vcc CC SS ESD Clamping Voltage V 9 V TLP, 10A, tp = 100 ns, I/O to V , per Fig. 8 ESD I/O SS 0.1 R TLP, 10A, tp = 100 ns, V to V DIF Vcc CC SS Dynamic Resistance R 0.25 TLP, 10A, tp = 100 ns, I/O to V DIF I/O SS Channel Input Capacitance C V 0.65 0.8 pF V = 2.5V, V = 5V, f = 1MHz I/O to SS R CC V = 5V, V = 0V, I/O = 2.5V, f =1MHz, CC SS Variation of Channel Input Capacitance C 0.02 pF I/O T=+25C , I/O x to V I/O y to V SS SS Notes: 5. Device mounted on Polymide PCB pad layout (2oz copper) as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website at