DT1140-04LP 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data Clamping Voltage:9V at 10A 100ns TLP 9V at 6A 8 s/20 s Case: U-DFN2510-10 IEC 61000-4-2 (ESD): Air +20/-18kV, Contact +20/-16kV Case Material: Molded Plastic, Green Molding Compound IEC 61000-4-5 (Lightning): 6A (8/20s) UL Flammability Classification Rating 94V-0 4 Channels of ESD protection Moisture Sensitivity: Level 1 per J-STD-020 Low Channel Input Capacitance of 0.5pF Typical Terminals: NiPdAu over Copper leadframe (Lead Free Plating) e4 TLP Dynamic Resistance: 0.25 Solderable per MIL-STD-202, Method 208 Typically Used for High Speed Ports such as USB 2.0, DVI, Weight: 0.038 grams (approximate) HDMI, Ethernet Port, IEEE,MDDI,PCI Express ,SATA/ eSATA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 10 9 8 7 6 Pin Description 1, 2, 4, 5 I/O Pin 5 Pin 1 Pin 2 Pin 4 6, 7, 9, 10 No Connection 3, 8 Vss 12 3 4 5 3,8 Pin Description (Top View) Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DT1140-04LP-7 Standard BC2 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DT1140-04LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current, per IEC 61000-4-5 6 A I I/O to V , 8/20s PP SS Peak Pulse Power, per IEC 61000-4-5 60 W P I/O to V , 8/20s PP SS Operating Voltage (DC) 6 V V I/O to V DC SS ESD Protection Contact Discharge, per IEC 61000-4-2 V +20/-16 kV I/O to V ESD Contact SS ESD Protection Air Discharge, per IEC 61000-4-2 V +20/-18 kV I/O to V ESD Air SS Operating Temperature -55 to +85 C T OP Storage Temperature T -55 to +150 C STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical(Note 5) 350 mW P D Thermal Resistance, Junction to Ambient Typical(Note 5) R 360 C/W JA Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 5.5 V V I =1mA, , I/O to V RWM R SS Reverse Current (Note 6) 0.5 A I V = 5V, I/O to V R R SS Reverse Breakdown Voltage 6 V V I = 1mA, I/O to V BR R SS Forward Clamping Voltage -1.0 -0.85 V V I = -15mA, I/O to V F F SS Holding Voltage 5.5 V V H Reverse Clamping Voltage (Note 7) 6.4 V V I = 1A, I/O to V , 8/20s C PP SS Reverse Clamping Voltage (Note 7) 9 10 V V I = 6A, I/O to V , 8/20s C PP SS Trigger Voltage 9.5 V V TRIG ESD Clamping Voltage 9 V V TLP, 10A, tp = 100 ns, I/O to V ESD SS Dynamic Reverse Resistance 0.25 R TLP, 10A, tp = 100 ns, I/O to V DIF-R SS Dynamic Forward Resistance 0.25 R TLP, 10A, tp = 100 ns, V to I/O DIF-F SS Channel Input Capacitance 0.5 0.65 pF C V = 2.5V, V = 0V, f = 1MHz I/O I/O SS Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at