DT1240E-04LP 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features V (Min) I (Max) C (Typ) Clamping Voltage: 7.5V at 10A 100ns, TLP 8.2V at 5A BR PP I/O (8s/20s) 5V 5A 0.55pF IEC 61000-4-2 (ESD): Air 14kV, Contact 12kV IEC 61000-4-5 (Lighting): 5A (8s/20s) 4 Channels of ESD Protection Description Low Channel Input Capacitance of 0.55pF Typical The DT1240E-04LP is a high-performance device suitable for TLP Dynamic Resistance: 0.2 protecting four high-speed I/Os. These devices are assembled in U- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) DFN2510-10 package and have high ESD surge capability and low Halogen and Antimony Free. Green Device (Note 3) capacitance. For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP Applications capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes Typically used at high-speed ports such as USB2.0, USB3.0, USB3.1, representative. IEEE1394 (Firewire , iLink), Serial ATA, DVI, HDMI1.4, DT1240E-04LP Marking Information MW5 = Product Type Marking Code YM = Date Code Marking TF2 YM MW5 Y = Year (ex: I = 2021) M = Month (ex: 9 = September) Date Code Key Year 2017 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code E I J K L M N O P R S Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Conditions Peak Pulse Current, per IEC 61000-4-5 5 A IPP I/O to VSS, 8/20s Peak Pulse Power, per IEC 61000-4-5 47 W PPP I/O to VSS, 8/20s ESD Protection Contact Discharge, per IEC 61000-4-2 12 kV VESD CONTACT I/O to VSS ESD Protection Air Discharge, per IEC 61000-4-2 14 kV VESD AIR I/O to VSS Operating Temperature -55 to +85 T C OP Storage Temperature T -55 to +150 C STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) P 350 mW D Thermal Resistance, Junction to Ambient Typical (Note 5) R 360 C/W JA Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 3.3 V VRWM Reverse Current 1.0 A IR VR = 3.3V, I/O to VSS Reverse Breakdown Voltage 5 V VBR IR = 1mA, I/O to VSS Forward Clamping Voltage -1.0 -0.85 V VF IF = -15mA, I/O to VSS Reverse Clamping Voltage (Note 6) 8.2 9.5 V VC IPP = 5A, I/O to VSS, 8/20s ESD Clamping Voltage 7.5 V VESD TLP, 10A, tP = 100ns, I/O to VSS Dynamic Reverse Resistance 0.2 R TLP, 10A, t = 100ns, I/O to V DIF-R P SS Dynamic Forward Resistance 0.2 R TLP, 10A, t = 100ns, V to I/O DIF-F P SS Channel Input Capacitance 0.55 0.65 pF C V = 2.5V, V = 0V, f = 1MHz I/O I/O SS 55 0.04 pF Delta C C -C CI/OMAX-CI/OMIN I/O I/OMAX I/OMIN Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds website at