DT1240V3-04SO
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Product Summary Features
V I C Clamping Voltage: 8.8V at 10A 100ns, TLP
BR (min) PP (max) T (typ)
6V 5.5A 0.55pF 9V at 5.5A 8s/20s
IEC 61000-4-2 (ESD): Air 16kV, Contact 14kV
IEC 61000-4-5 (Lightning): 5.5A (8/20s)
Description
4 Channels of ESD Protection
The DT1240V3-04SO-7 is a high-performance device suitable for
Low Channel Input Capacitance of 0.55pF Typical
protecting four high speed I/Os. These devices are assembled in
TLP Dynamic Resistance: 0.3
SOT26 packages and have high ESD surge capability and low
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
capacitance.
Halogen and Antimony Free. Green Device (Note 3)
Mechanical Data
Applications
Case: SOT26
Typically used at high-speed ports such as USB 2.0, IEEE1394
Moisture Sensitivity: Level 1 per J-STD-020
(Firewire, iLink), Serial ATA, DVI, HDMI, PCI.
Terminal Connections: See Schematic
Terminals Finish Matte Tin Pleated Leads;
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.016 grams (Approximate)
SOT26
N/A
Top View Device Schematic Circuit Schematic
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
DT1240V3-04SO-7 Standard BE8 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DT1240V3-04SO
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current, per IEC 61000-4-5 I 5.5 A I/O to V , 8/20s
PP SS
60 W
Peak Pulse Power, per IEC 61000-4-5 P I/O to V , 8/20s
PP SS
ESD Protection Contact Discharge, per IEC 61000-4-2 V 14 kV I/O to V
ESD_Contact SS
ESD Protection Air Discharge, per IEC 61000-4-2 16 kV
V I/O to V
ESD_Air SS
Operating Temperature -55 to +85 C
T
OP
Storage Temperature -55 to +150 C
T
STG
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation Typical (Note 5) 300 mW
P
D
Thermal Resistance, Junction to Ambient Typical (Note 5) 417 C/W
R
JA
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Working Voltage 3.3 V
V I =1mA, , I/O to V
RWM R SS
Reverse Current 0.5 A
I V = 3.3V, I/O to V
R R SS
Reverse Breakdown Voltage 6 V
V I = 1mA, I/O to V
BR R SS
Forward Clamping Voltage -1.0 -0.85 V
V I = -15mA, I/O to V
F F SS
Reverse Clamping Voltage (Note 6) 9 11 V
V I = 5.5A, I/O to V , 8/20s
C PP SS
Trigger Voltage 9.5 V
V
TRIG
ESD Clamping Voltage 8.8 V
V TLP, 10A, tp = 100 ns, I/O to V
ESD SS
Dynamic Reverse Resistance 0.3
R TLP, 10A, tp = 100 ns, I/O to V
DIF-R SS
Dynamic Forward Resistance 0.25
R TLP, 10A, tp = 100 ns, V to I/O
DIF-F SS
Channel Input Capacitance 0.55 0.65 pF
C V = 2.5V, V = 0V, f = 1MHz
I/O I/O SS
55
0.04 pF
Delta C C -C C -C
I/O I/OMAX I/OMIN I/OMAX I/OMIN
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at