DT2636-04S 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data IEC 61000-4-2 (ESD): Air 20kV, Contact 18kV Case: SOT363 4 Channels of ESD Protection Case Material: Molded Plastic, Green Molding Compound. UL Low Channel Input Capacitance of 0.65pF Typical Flammability Classification Rating 94V-0 Typically Used at High Speed Ports such as USB 2.0, Moisture Sensitivity: Level 1 per J-STD-020 IEEE1394, Serial ATA, DVI, HDMI, PCI Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.006 grams (approximate) NC CH 4 CH 3 65 4 SOT363 Pin 5 Pin 1 Pin 2 Pin 4 12 3 Pin 3 CH 1 CH 2 GND Top View Device Pinout Device Schematic Ordering Information (Note 4) Part Number Case Packaging DT2636-04S-7 SOT363 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DT2636-04S Maximum Ratings ( T = +25C, unless otherwise specified) A Characteristic Symbol Value Unit Conditions Peak Pulse Current I 6.5 A 8/20s, From CH to GND PP Peak Pulse Current I 6.5 A 8/20s, From GND to CH PP Peak Pulse Power P 60 W 8/20s, From CH to GND PP ESD Protection Contact Discharge V 18 kV Standard IEC 61000-4-2 ESD Contact ESD Protection Air Discharge 20 kV Standard IEC 61000-4-2 V ESD Air Operating Temperature -55 to +85 C T OP Storage Temperature -55 to +150 C T STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient Typical (Note 5) R 625 C/W JA Electrical Characteristics ( T = +25C, unless otherwise specified) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 5.5 V RWM Channel Leakage Current (Note 6, 7) I 1 10 nA V = 2.5V R R Reverse Breakdown Voltage V 7.0 9.5 V I = 1mA, from CH to GND BR R Clamping Voltage, Positive Transients V 6.8 V I = 1A, t = 8/20s CL1 PP p Clamping Voltage, Positive Transients V 9 V I = 5A, t = 8/20s CL1 PP p Clamping Voltage, Negative Transients 1.5 V V I = 1A, t = 8/20s CL2 PP p Forward Voltage 0.7 V V I = 1mA, GND to CH F F Dynamic Resistance 0.4 R I = 1A, t = 8/20s, CH to GND DIFF PP p Dynamic Resistance 0.45 TLP, 20A, tp = 100 ns, CH to GND R DIFF-R Dynamic Resistance R 0.2 TLP, 20A, tp = 100 ns, GND to CH DIFF-F 0.75 pF V = 0V, f = 1MHz (CH-GND) CH to GND Capacitance C (CH-GND) 0.65 0.9 pF V = 2.5V, f = 1MHz (CH-GND) CCHMAX- Delta CCH 0.04 pF C -C CHMAX CHMIN CCHMIN Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at