Lead-free Green LMN200B01 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR General Description LMN200B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators, etc., particularly at a point 6 of load. It features a discrete pass transistor with stable 5 V which does not depend on the input voltage and CE(SAT) 4 can support continuous maximum current of 200 mA. It also contains a discrete N-MOSFET that can be used as control. This N-MOSFET also has a built-in pull down 1 resistor at its gate. The component can be used as a part 2 of a circuit or as a stand alone discrete device. 3 Features Fig. 1: SOT-26 Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor C Q1 B Q1 Surface Mount Package S Q2 6 5 4 Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) Gree Device (Note 2) C DDTB142JU DIE Q1 R2 B R3 PNP 470 Mechanical Data 37K E S G R1 10K Q2 Case: SOT-26 NMOS Case Material: Molded Plastic, Green Molding DSNM6047 DIE D Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C 1 2 3 Terminal Connections: See Diagram E Q1 G Q2 D Q2 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Fig. 2 Schematic and Pin Configuration Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.016 grams (approximate) Sub-Components Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure DDTB142JU DIE Q1 PNP Transistor 10K 470 2 DSNM6047 DIE Q2 N-MOSFET 37K 2 T = 25C unless otherwise specified Maximum Ratings, Total Device A Characteristic Symbol Value Unit Power Dissipation (Note 3) P 300 mW d Power Derating Factor above 125C P 2.4 mW/C der I Output Current out 200 mA Thermal Characteristics Characteristic Symbol Value Unit Junction Operation and Storage Temperature Range T ,T -55 to +150 C j stg Thermal Resistance, Junction to Ambient Air (Note3) R JA 417 C/W (Equivalent to one heated junction of PNP transistor) Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Maximum Ratings: T = 25C unless otherwise specified A Sub-Component Device: Pre-Biased PNP Transistor (Q1) Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO V Supply Voltage cc -50 V V Input Voltage in +5 to -6 V Output Current I -200 mA C Sub-Component Device: N-MOSFET with Gate Pull-Down Resistor (Q2) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Drain Gate Voltage (R 1M) V 60 V GS DGR Gate-Source Voltage Continuous +/-20 V V GSS Pulsed (tp<50 uS) +/-40 Drain Current (Page 1: Note 3) Continuous (V = 10V) 115 gs I D mA Pulsed (tp <10 uS, Duty Cycle <1%) 800 I Continuous Source Current S 115 mA DS30651 Rev. 7 - 2 2 of 10 LMN200B01 www.diodes.com NEW PRODUCT