LMN400B01 400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR Product Summary Features Voltage Controlled Small Signal Switch Device R1 R2 R3 Reference Figure N-MOSFET with Gate Pull-Down Resistor Type (NOM) (NOM) (NOM) Ideally Suited for Automated Assembly Processes Q1 PNP Transistor 10K 220 2 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Q2 N-MOSFET 37K 2 Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data LMN400B01 is best suited for applications where the load needs to Case: SOT26 be turned on and off using control circuits like micro-controllers, Case Material: Molded Plastic, Green Molding comparators etc. particularly at a point of load. It features a discrete Compound. UL Flammability Classification Rating 94V-0 pass transistor with stable V which does not depend on input CE(SAT) voltage and can support continuous maximum current of 400 mA . It Moisture sensitivity: Level 1 per J-STD-020C also contains a discrete N-MOSFET with gate pull-down resistor that Terminal Connections: See Diagram can be used as control. The component devices can be used as a Terminals: Finish - Matte Tin annealed over Copper leadframe. part of a circuit or as a stand alone discrete device. e3 Solderable per MIL-STD-202, Method 208 Weight: 0.016 grams (approximate) 6 5 4 1 2 3 Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging LMN400B01-7 SOT26 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See LMN400B01 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 300 mW D Power Derating Factor above +100C P 2.4 mW/C DER Output Current 400 mA I OUT Thermal Characteristics Characteristic Symbol Value Unit Operating and Storage Temperature Range T , T -55 to +150 C J STG Thermal Resistance, Junction to Ambient Air (Note 5) 417 C/W R JA Maximum Ratings: Pre-Biased PNP Transistor (Q1) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage -50 V V CEO Supply Voltage -50 V V CC Input Voltage -6 to +5 V V IN Output Current I -400 mA C Maximum Ratings: ESD Protected N-Channel MOSFET (Q2) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS 60 V Drain Gate Voltage (R 1M ) V GS DGR +/-20 Gate-Source Voltage Continuous V V GSS Pulsed (tp < 50S) +/-40 115 Drain Current (Note 5) Continuous (V = 10V) GS I mA D Pulsed (tp <10S, Duty Cycle <1%) 800 Continuous Source Current I 115 mA S Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at