LMN400E01 400mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET Features Mechanical Data Voltage Controlled Small Signal Switch Case: SOT363 N-MOSFET with ESD Gate Protection Case Material: Molded Plastic.Green Moldin Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020C Lead Free By Design/ROHS Compliant (Note 1) Terminal Connections: See Diagram Gree Device (Note 2) Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Description Weight: 0.006 grams (approximate) LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete Reference Device Type R1(NOM) R2(NOM) Figure pass transistor with stable V which does not depend on input CE(SAT) PNP Q1 10K 220 2 voltage and can support continuous maximum current of 400 mA. It Transistor also contains an ESD protected discrete N-MOSFET that can be used Q2 N-MOSFET 2 as control. The component can be used as a part of a circuit or as a stand alone discrete device. B Q1 S Q2 C Q1 SOT363 6 5 4 6 C 5 S Q1 R2 B 4 PNP Q2 220 G E NMOS R1 10K D 1 2 3 3 1 2 D Q2 E Q1 G Q2 Top View Top View Internal Schematic Ordering Information (Note 3) Device Packaging Shipping LMN400E01-7 SOT363 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at LMN400E01 Maximum Ratings, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) 200 mW P D 1.6 mW/C Power Derating Factor above 37.5C P der Output Current 400 mA I out Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Operating and Storage Temperature Range -55 to +150 T , T C j STG Thermal Resistance, Junction to Ambient Air (Note 4) 625 R C/W JA Maximum Ratings: Pre-Biased PNP Transistor (Q1) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Supply Voltage V -50 V cc Input Voltage -6 to +5 V V in Output Current -400 mA I C Maximum Ratings: ESD Protected N-Channel MOSFET (Q2) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS 60 V Drain Gate Voltage (R 1M Ohm) V GS DGR +/-20 Gate-Source Voltage Continuous V V GSS Pulsed (tp<50 uS) +/-40 300 Drain Current (Note 4) Continuous (V = 10V) gs I mA D Pulsed (tp <10 uS, Duty Cycle <1%) 800 Continuous Source Current 300 mA I S Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at