Green P4SMAJ5.0ADF P4SMAJ85ADF 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT to Optimize Board Space Case: D-FLAT Glass Passivated Die Construction Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Excellent Clamping Capability Moisture Sensitivity: Level 1 per J-STD-020 IEC 61000-4-2 (ESD): Air 30kV, Contact 30kV Terminals: Finish Matte Tin Annealed over Copper Leadframe. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Polarity Indicator: Cathode Band Weight: 0.035 grams (Approximate) D-FLAT 1 = Cathode 1 2 2 = Anode Top View Device Schematic Ordering Information (Note 4) Part Number Qualification Case Packaging P4SMAJX.XADF-13 Standard D-FLAT 10,000/Tape & Reel P4SMAJXXADF-13 Standard D-FLAT 10,000/Tape & Reel *XX = Device Voltage, for example: P4SMAJ17ADF-13. Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See P4SMAJ5.0ADF P4SMAJ85ADF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Pulse Power Dissipation 400 W P PK (Non Repetitive Current Pulse Derated Above T = +25C) (Note 5) A Peak Forward Surge Current, 8.3ms Single Half Sine Wave I 40 A FSM Superimposed on Rated Load (Notes 5 & 6 ) 1.0 W Steady State Power Dissipation TL = +75C PM(AV) 3.5 V Instantaneous Forward Voltage I = 35A (Notes 5 & 6) V PP F Notes: 5. Valid provided that terminals are kept at ambient temperature. 6. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum. Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 7) R 37 C/W JT Typical Thermal Resistance, Junction to Terminal (Note 8) R 39 C/W JT Typical Thermal Resistance, Junction to Ambient (Note 7) 114 C/W R JA Typical Thermal Resistance, Junction to Ambient (Note 8) 88 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 7. Device mounted on FR-4 substrate, 1 *1 , 2oz, single-sided, PC boards with 0.06 *0.09 copper pad. 8. Device mounted on FR-4 substrate, 0.4 *0.5 , 2oz, single-sided, PC boards with 0.2 *0.25 copper pad. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Reverse Breakdown Max. Reverse Max. Clamping Max. Peak Pulse Test Voltage Leakage Standoff Voltage I Current PP Current Part Number Marking Code Voltage V I (Note 9) V (Note 10) BR T RWM (Note 10) V (V) Min (V) Max (V) I (mA) I (A) V (V) I (A) RWM T R C PP P4SMAJ5.0ADF 5.0 6.40 7.25 10 400 9.2 43.5 HE P4SMAJ6.0ADF 6.0 6.67 7.37 10 400 10.3 38.8 HG P4SMAJ6.5ADF 6.5 7.22 7.98 10 250 11.2 35.7 HK P4SMAJ7.0ADF 7.0 7.78 8.60 10 100 12.0 33.3 HM P4SMAJ7.5ADF 7.5 8.33 9.21 1.0 50 12.9 31.0 HP P4SMAJ8.0ADF 8.0 8.89 9.83 1.0 25 13.6 29.4 HR P4SMAJ8.5ADF 8.5 9.44 10.82 1.0 10 14.4 27.7 HT P4SMAJ9.0ADF 9.0 10.0 11.5 1.0 5.0 15.4 26.0 HV P4SMAJ10ADF 10 11.1 12.3 1.0 1.0 17.0 23.5 HX P4SMAJ11ADF 11 12.2 13.5 1.0 1.0 18.2 22.0 HZ P4SMAJ12ADF 12 13.3 14.7 1.0 1.0 19.9 20.1 IE P4SMAJ13ADF 13 14.4 15.9 1.0 1.0 21.5 18.6 IG P4SMAJ14ADF 14 15.6 17.2 1.0 1.0 23.2 17.2 IK P4SMAJ15ADF 15 16.7 18.5 1.0 1.0 24.4 16.4 IM P4SMAJ16ADF 16 17.8 19.7 1.0 1.0 26.0 15.3 IP P4SMAJ17ADF 17 18.9 20.9 1.0 1.0 27.6 14.5 IR P4SMAJ18ADF 18 20.0 22.1 1.0 1.0 29.2 13.7 IT P4SMAJ20ADF 20 22.2 24.5 1.0 1.0 32.4 12.3 IV P4SMAJ22ADF 22 24.4 26.9 1.0 1.0 35.5 11.2 IX P4SMAJ24ADF 24 26.7 29.5 1.0 1.0 38.9 10.3 IZ P4SMAJ26ADF 26 28.9 31.9 1.0 1.0 42.1 9.5 JE P4SMAJ28ADF 28 31.1 34.4 1.0 1.0 45.4 8.8 JG P4SMAJ30ADF 30 33.3 36.8 1.0 1.0 48.4 8.3 JK P4SMAJ33ADF 33 36.7 40.6 1.0 1.0 53.3 7.5 JM P4SMAJ36ADF 36 40.0 44.2 1.0 1.0 58.1 6.9 JP Notes: 9. V measured with I current pulse = 10ms to 15ms. BR T 10. Per 10 1000s waveform. See Figure 4. 2 of 6 August 2019 P4SMAJ5.0ADF P4SMAJ85ADF www.diodes.com Diodes Incorporated Document number: DS39017 Rev. 3 - 2