X-On Electronics has gained recognition as a prominent supplier of P6SMAJ7.5ADF-13 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. P6SMAJ7.5ADF-13 ESD Suppressors / TVS Diodes are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

P6SMAJ7.5ADF-13 Diodes Incorporated

P6SMAJ7.5ADF-13 electronic component of Diodes Incorporated
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Part No.P6SMAJ7.5ADF-13
Manufacturer: Diodes Incorporated
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors TVS Diodes Transient Voltage Suppressor
Datasheet: P6SMAJ7.5ADF-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.1375 ea
Line Total: USD 1375 
Availability - 0
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 10000
Multiples : 10000
10000 : USD 0.1375

   
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We are delighted to provide the P6SMAJ7.5ADF-13 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P6SMAJ7.5ADF-13 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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P6SMAJ5.0ADF P6SMAJ85ADF Green 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data Packaged in the Low Profile D-FLAT Package to Optimize Board Case: D-FLAT Space Case Material: Molded Plastic. Glass Passivated Die Construction UL Flammability Classification Rating 94V-0 Excellent Clamping Capability Moisture Sensitivity: Level 1 per J-STD-020 Fast Response Time Terminals: Finish - Matte Tin Annealed over Copper Leadframe. P4SSMAJ200(C)A Lead-Free Finish RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Polarity Indicator: Cathode Band Weight: 0.035 grams (Approximate) 1 = Cathode 1 2 2 = Anode Device Schematic Top View Ordering Information (Note 4) Part Number Compliance Case Packaging P6SMAJXXADF-13 Commercial D-FLAT 10,000/Tape & Reel *XX = Device Voltage, for example: P6SMAJ17ADF-13. Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See P6SMAJ5.0ADF P6SMAJ85ADF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Peak Pulse Power Dissipation 600 W P PK (Non Repetitive Current Pulse Derated Above T = +25C) (Note 5) A Peak Forward Surge Current, 8.3ms Single Half Sine Wave I 60 A FSM Superimposed on Rated Load (Notes 5 & 6 ) 1.5 W Steady State Power Dissipation TL = +75C PM(AV) 3.5 V Instantaneous Forward Voltage I = 35A (Notes 5 & 6) V PP F Notes: 5. Valid provided that terminals are kept at ambient temperature. P4SSMAJ200(C)A 6. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum. Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 7) 64 C/W R JT Typical Thermal Resistance, Junction to Terminal (Note 8) 57 C/W R JT Typical Thermal Resistance, Junction to Ambient (Note 7) R 115 C/W JA Typical Thermal Resistance, Junction to Ambient (Note 8) 92 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 7. Device mounted on FR-4 substrate, 1 x 1 , 2oz, single-sided, PC boards with 0.06 x 0.09 copper pad. 8. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pad. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Reverse Breakdown Max. Reverse Max. Clamping Max. Peak Pulse Test Standoff Voltage Leakage Current Part Number Voltage I Marking Code PP Current Voltage V I (Note 9) V (Note 10) I (Note 10) BR T RWM PP V (V) Min (V) Max (V) I (mA) I (A) V (V) (A) RWM T R C P6SMAJ5.0ADF 5.0 6.40 7.23 10 800 9.2 65.2 KE P6SMAJ6.0ADF 6.0 6.67 7.67 10 800 10.3 58.3 KG P6SMAJ6.5ADF 6.5 7.22 8.30 10 500 11.2 53.6 KK P6SMAJ7.0ADF 7.0 7.78 8.95 10 200 12.0 50.0 KM P6SMAJ7.5ADF 7.5 8.33 9.58 1.0 100 12.9 46.5 KP P6SMAJ8.0ADF 8.0 8.89 10.23 1.0 50 13.6 44.1 KR P6SMAJ8.5ADF 8.5 9.44 10.82 1.0 10 14.4 41.7 KT P6SMAJ9.0ADF 9.0 10.00 11.50 1.0 5.0 15.4 39.0 KV P6SMAJ10ADF 10 11.10 12.80 1.0 5.0 17.0 35.3 KX P6SMAJ11ADF 11 12.20 14.40 1.0 1.0 18.2 33.0 KZ P6SMAJ12ADF 12 13.30 15.30 1.0 1.0 19.9 30.2 LE P6SMAJ13ADF 13 14.40 16.50 1.0 1.0 21.5 27.9 LG P6SMAJ14ADF 14 15.60 17.90 1.0 1.0 23.2 25.8 LK P6SMAJ15ADF 15 16.70 19.20 1.0 1.0 24.4 24.0 LM P6SMAJ16ADF 16 17.80 20.50 1.0 1.0 26.0 23.1 LP 18.90 21.70 21.7 LR P6SMAJ17ADF 17 1.0 1.0 27.6 P6SMAJ18ADF 18 20.00 23.30 1.0 1.0 29.2 20.5 LT P6SMAJ20ADF 20 22.20 25.50 1.0 1.0 32.4 18.5 LV P6SMAJ22ADF 22 24.40 28.00 1.0 1.0 35.5 16.9 LX P6SMAJ24ADF 24 26.70 30.70 1.0 1.0 38.9 15.4 LZ P6SMAJ26ADF 26 28.90 33.20 1.0 1.0 42.1 14.2 ME P6SMAJ28ADF 28 31.10 35.80 1.0 1.0 45.4 13.2 MG P6SMAJ30ADF 30 33.30 38.30 1.0 1.0 48.4 12.4 MK P6SMAJ33ADF 33 36.70 42.20 1.0 1.0 53.3 11.3 MM P6SMAJ36ADF 36 40.00 46.00 1.0 1.0 58.1 10.3 MP Notes: 9. V measured with I current pulse = 10 ~ 15ms. BR T 10. Per 10 x 1000s waveform. See Figure 4. 2 of 6 June 2017 P6SMAJ5.0ADF P6SMAJ85ADF www.diodes.com Diodes Incorporated Document number: DS38930 Rev. 2 - 2 NEW PRODUCT ADVANCED INFORMATION

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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