A product Line of Diodes Incorporated PI3B3257 3.3V, Quad 2:1 Mux/DeMux NanoSwitch Features Description Near-Zero propagation delay e Th PI3B3257 is a 3.3 Volt, Quad 2:1 multiplexer/demultiplexer with three-state outputs that is pinout and function compatible 5 switches connect inputs to outputs with the PI74FCT257T, 74F257, and 74ALS/AS/LS257. Inputs can Fast Switching Speed: 4.8ns max. be connected to outputs with low On-Resistance (5) with no Ultra-Low Quiescent Power: 0.1A typical additional ground bounce noise or propagation delay. Ideally suited for notebook applications Pin Configuration (UQFN) Pin compatible with 74 series 257 logic devices Packaging (Pb-free & Green avaliable): 16-pin, QSOP (Q) 16 15 14 13 16-pin, SOIC (W) S 1 12 Y D 16-pin, TSSOP (L) 16-pin, UQFN (ZHD) A C I 0 2 11 I 0 Block Diagram C I 1A 3 10 I 1 A A B B C C D D I 0 I 1 I 0 I 1 I 0 I 1 I 0 I 1 Y 4 9 Y A C 5 6 7 8 SW SW SW Transparent top view E SW (1) Truth Table SW SW E S Y Y Y Y Function S A B C D SW H X Hi-Z Hi-Z Hi-Z Hi-Z Disable SW L L A B C D S = 0 I 0 I 0 I 0 I 0 L H A B C D S = 1 I 1 I 1 I 1 I 1 SW Note: YA YB YC YD 1. H = High Voltage Level IY L = Low Voltage Level Pin Description E Pin Name Description A - D Data Inputs I N I N Pin Configuration (QSOP, SOIC, TSSOP) S Select Inputs 16 V S 1 CC E Enable 15 A 2 E I 0 Y -Y Data Outputs A D (1) 14 IA 3 D 1 I 0 GND Ground 13 Y 4 D A I 1 V Power CC 12 IB 5 Y NC No Connect 0 D Note 1: UQFN16 package die supply ground is connected to both GND pin and 11 IB 6 C 1 I 0 exposed center pad. GND pin must be connected to supply ground for proper de- 10 vice operation. For enhanced thermal, electrical, and board level performance, the Y 7 B IC1 exposed pad needs to be soldered to the board using a corresponding thermal pad 8 9 GND Y on the board and for proper heat conduction through the board, thermal vias need C to be incorporated in the PCB in the thermal pad region. www.diodes.com April 2018 PI3B3257 Diodes Incorporated Document Number DS40430 Rev 2-2 1 B I 0 VCC B E I 1 D Y B I 0 D GND I 1A product Line of Diodes Incorporated PI3B3257 Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Note: Storage Temperature .....................................................................65C to +150C Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. Ambient Temperature with Power Applied ....................................40C to +85C This is a stress rating only and functional operation of Supply Voltage to Ground Potential .................................................0.5V to +4.6V the device at these or any other conditions above those indicated in the operational sections of this specification DC Input Voltage .............................................................................0.5V to +4.6V is not mplied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC Output Current ........................................................................................ 120mA Power Dissipation ............................................................................................ 0.5W DC Electrical Characteristics (Over the Operating Range, T = 40C to +85C, V = 3.3V 10%) A CC (1) (2) Parameters Description Test Conditions Min. Typ. Max. Units V Input HIGH Voltage Guaranteed Logic HIGH Level 2 IH V V Input LOW Voltage Guaranteed Logic LOW Level 0.5 0.8 IL I Input HIGH Current V = Max., V = V 1 IH CC IN CC I Input LOW Current V = Max., V = GND 1 A IL CC IN I High Impedance Output Current 0 In, Yn V 1 OZH CC V Clamp Diode Voltage V = Min., I = 18mA 1.2 V IK CC IN V = Min., V = 0.0V, CC IN 5 8 (3) Ion = 48mA or 64mA R Switch On-Resistance ON V = Min., V = 2.4V, I = 15mA 8 17 CC IN ON Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at V = 3.3V, T = 25C ambient and maximum loading. CC A 3. Measured by the voltage drop between I and Y pin at indicated current through the switch. On-Resistance is determined by the lower of the voltages on the two (I,Y) pins. Capacitance (T = 25C, f = 1 MHz) A (1) Parameters Description Test Conditions Typ. Units C Input Capacitance 3.0 IN 17.0 C Y Capacitance, Switch OFF OFFYN N V = 0V pF IN C I Capacitance, Switch OFF 8.5 OFFIN N C I /Y Capacitance, Switch ON 25 ON N N Notes: 1. This parameter is determined by device characterization but is not production tested. Power Supply Characteristics (1) (2) Parameters Description Test Conditions Min. Typ. Max. Units I Quiescent Power Supply Current V = Max. V = GND or V 0.1 3.0 CC CC IN CC A Supply Current per Input TTL I V = Max. V = 3.0 750 CC (3, 4) CC IN HIGH Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device. 2. Typical values are at V = 3.3V, +25C ambient. CC 3. Per TTL driven input (control inputs only) I and Y pins do not contribute to I . CC 4. This current applies to the control inputs only and represent the current required to switch internal capacitance at the specified frequency . The I and Y inputs generate no significant AC or DC currents as they transition. This parameter is not tested, but is guaranteed by design. www.diodes.com April 2018 PI3B3257 2 Diodes Incorporated Document Number DS40430 Rev 2-2