PI2BV3877 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901 2123456789012 1 2345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012 12345678901 2 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901 2123456789012 2.5V, 10-Bit, 2-Port 266 MHz DDR Bus Switch Product Features Product Description Used in X4 DDR modules Pericom Semiconductors PI2B series of logic circuits are produced using the Companys advanced submicron CMOS technology, Near zero propagation delay achieving industry leading performance. 20-ohm switches connect inputs to outputs The PI2BV3877 is a 10-bit, 2.5 volt two-port bus switch designed with Fast Switching Speed 3ns (max.) a low ON resistance allowing inputs to be connected directly to Low Off Capacitance (3pF) outputs. The bus switch creates no additional propagational delay or additional ground bounce noise. The switches are turned ON by Pull-down on B output the Bus Enable (BE ) input signals. N Packages available: The PI2BV3877 switch is intended for 266 MHz DDR (X4) Memory 24-pin 150 mil wide plastic QSOP (Q) Module Applications. 24-pin 173 mil wide plastic TSSOP (L) Product Pin Configuration Logic Block Diagram BE0 1 24 V A0 B0 CC A0 2 23 B0 A1 3 22 B1 A4 B4 A2 4 21 B2 5 20 A3 B3 24-Pin 6 19 A4 B4 Q, L A5 7 18 B5 BE0 A6 8 17 B6 A5 B5 9 16 A7 B7 10 15 A8 B8 11 14 A9 B9 B9 A9 GND 12 13 BE1 (1) Truth Table BE1 F0unction B4E A0 A DHisconnect Hi-Z CLonnect B0-4 Product Pin Description Pnin Name Descriptio F1unction B9E A5 A B)E0, BE1 Bus Enable Input (Active Low DHisconnect Hi-Z AA04, A5-9 Bus CLonnect B5-B9 BB0-4, B5-9 Bus Notes: GdND Groun 1. H = High Voltage Level L = Low Voltage Level V Power CC Hi-Z = High Impedance PS8472D 11/14/01 1PI2BV3877 2.5V, 10-Bit, 2-Port 266 MHz DDR Bus Switch 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901 2123456789012 1234567890123456789012345678901212345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901 2123456789012 Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Note: Storage Temperature ............................................................. 65C to +150C Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the de- Ambient Temperature with Power Applied ............................. 40C to +85C vice. This is a stress rating only and functional Supply Voltage to Ground Potential ......................................... 0.5V to +4.6V operation of the device at these or any other condi- DC Input Voltage ...................................................................... 0.5V to +4.6V tions above those indicated in the operational sec- DC Output Current ................................................................................ 120mA tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended Power Dissipation .................................................................................... 0.5W periods may affect reliability. DC Electrical Characteristics (Over the Operating Range, T = 0C to +85C, V = 2.3V to 2.7V) A CC (1) (2) PnarametersDsescriptio Test Condition Mpin. Ty Msax. Unit VIlnput HIGH Voltage (BE0, BE1)G6uaranteed Logic HIGH Leve 1V. +0.3 IH CC V VIlnput LOW Voltage (BE0, BE1)G3uaranteed Logic LOW Leve 0. 0.9 IL IIVnput Current = Max., V = Vo0r GND A1 I CC IN CC VCVlamp Diode Voltage = Min., I=218mA 1. V IK CC IN (4) R Switch ON Resistance V = Min., V=I0.9V,=720mA 133 ON CC IN ON V = Min., V=I1.6V,=215mA 203 CC IN ON (5) R Pull-Down Resistance V = 2.5V, I 2050A1k PD BIAS(B-Ports) OZH Capacitance (T = 25C, f = 1 MHz) A (1) Parameters Dsescription T.est Condition Tsyp Unit C Input Capacitance 3 IN CA3Capacitance, Switch OFF V = 0V pF OFF IN C(NA/B)A7/B Capacitance, Switch O ON Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at V = 2.5V, T = 25C ambient and maximum loading. CC A 3. Measured by the voltage drop between A and B pin at indicated current through the switch. ON resistance is determined by the lower of the voltages on the two (A,B) pins. 4. This parameter is determined by device characterization but is not production tested. 5. Pull-down resistance is measured with the switch OFF & calculated by V /I . BIAS(B-Port) OZH Power Supply Characteristics (1) (2) PnarametersDsescriptio Test Condition Mpin. Ty Msax. Unit IQVuiescent Power Supply Current = Max, V = V or GND 1A0 CC CC IN CC Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device. 2. Typical values are at V = 2.5V, +25C ambient. CC 3. Per LVTTL driven input (control input only) A and B pins do not contribute to I . CC PS8472D 11/14/01 2