N.C. GND A product Line of Diodes Incorporated PI3USB14-A Low Voltage, High Bandwidth, USB 2.0, 4:1 Mux/DeMux with Single Enable Features Description Near-Zero propagation delay e PTh I3USB14-A is a 2-channel, 4:1 Multiplexer/Demultiplexer with 3-state outputs. The switch introduces no additional ground 5 switches connect inputs to outputs bounce noise or propagation delay. High signal passing bandwidth (-3dB BW is 815MHz) e PTh I3USB14-A device is very useful in switching USB 2.0 sig - Beyond Rail-to-Rail switching nals and others that have high bandwidth (-3dB BW is 815MHz). 5V I/O tolerant with 3.3V supply 3.3V supply voltage operation Hot insertion capable Industrial operating temperature: -40C to +85C ESD protection 8kV per JESD22 test spec (HBM) +/-4kV per IEC61000-4-2 spec (contact) Latch-up performance >250mA per JESD17 Packaging (Pb-free & Green available): 16-pin 150-mil wide plastic TSSOP (L) 20-pin Very Thin Quad Flat, No lead TQFN (ZH) Block Diagram Pin Configuration IA0 IA1 IA2 IA3 IB0 IB1 IB2 IB3 1 20 2 19 V N.C. DD EN 16 1 EN N.C. 3 18 EN N.C. 2 15 S S 1 1 S 14 0 17 3 4 S A A 0 I 3 I 3 B I 3 4 13 16 A 5 B I 2 I 3 IA2 B 5 12 I 2 S0 A I 1 15 6 B I 2 A I 1 B 6 11 I 1 A I 0 14 7 B A I 1 I 0 S1 B 7 10 I 0 Y A 8 13 B Y I 0 A Y 8 9 B GND 9 12 Y N.C. B 10 11 YA YB Note: 1. N.C. = No internal connection (1) Pin Description Truth Table Pin Name Description Enable Select EN S S Y Function A , B Data Inputs I N I N 1 0 S Select Inputs H X X Hi-Z Disable 0-1 EN Enable L L L I0 S1-0 = 0 Y to Y Data Outputs L L H I1 S1-0 = 1 A B GND Ground L H L I2 S1-0 = 2 V Power L H H I3 S1-0 = 3 DD Note: 1. H=High Voltage Level L=Low Voltage Level All trademarks are property of their respective owners. www.diodes.com 01/10/17 17-0003 1 N.C. V DDA product Line of Diodes Incorporated PI3USB14-A Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Note: Storage Temperature ................................................ 65C to +150C Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a Ambient Temperature with Power Applied ............... 40C to +85C stress rating only and functional operation of the device at these or Supply Voltage to Ground Potential ........................... 0.5V to +4.6V any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum DC Input Voltage ........................................................ 0.5V to +6.0V rating conditions for extended periods may affect reliability. DC Output Current ................................................................... 120mA Power Dissipation ........................................................................0.5W DC Electrical Characteristics, 3.3V Supply (Over the Operating Range, T = 40C to +85C, V = 3.3V 10%) A DD (1) (2) Parameters Description Test Conditions Min. Typ. Max. Units V Input HIGH Voltage Guaranteed Logic HIGH Level 1.3 IH V Input LOW Voltage Guaranteed Logic LOW Level 0.6 V IL V Clamp Diode Voltage V = Min., I = 18 mA -1.3 1.8 IK DD IN I Input HIGH Current V = Max., V = V 1 IH DD IN DD I Input LOW Current V = Max., V = GND 1 A IL DD IN I High Impedance Output Current 1 0 Y, In V OZH DD V = Min., -0.4V Vinput 0.4V, DD 4 6 (4) I = -40mA R Switch On-Resistance ON ON 0V Vinput V , ION = -40mA 5 8 DD Capacitance (T = 25C f = 1 MHz) A (5) Parameters Description Test Conditions Typ. Units C Input Capacitance 2.0 IN C In Capacitance, Switch Off 2.5 OFF(IN) V = 0V pF IN C Y Capacitance, Switch Off 4 OFF(Y) C Y/In Capacitance, Switch On 8 ON Notes 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at V = 3.3V, T = 25C ambient and maximum loading. DD A 3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second. 4. Measured by the voltage drop between Y and In pin at indicated current through the switch. On-Resistance is determined by the lower of the voltages on the two (Y, In) pins. 5. Th is parameter is determined by device characterization but is not production tested. All trademarks are property of their respective owners. www.diodes.com 01/10/17 17-0003 2