Green S1MWF 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V (MAX) (V) I (A) Glass Passivated Die Construction RRM O F R(MAX) Small Form Factor, Low Profile 1000 1 1.1 5 Surge Overload Rating to 30A Peak Low Reverse Leakage Current High Reverse Breakage Voltage Lead-Free Finish & RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications The S1MWF is a rectifier packaged in the small form factor, low Case: SOD123F (Type B) profile SOD123F (Type B) package. Providing high reverse breakage Case Material: Molded Plastic, Green Molding Compound voltage, low reverse leakage current, and high surge current UL Flammability Classification Rating 94V-0 capability for standard rectification, this device is ideal for use in Moisture Sensitivity: Level 1 per J-STD-020 general rectification applications such as: Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Switching Mode Power Supplies Polarity: Cathode Band DC-DC Converters Weight: 0.018 grams (Approximate) AC-DC Adaptors/Chargers Mobile Devices SOD123F (Type B) LED Lighting Schematic View Bottom View Top View Ordering Information (Note 4) Part Number Compliance Case Packaging S1MWF-7 Commercial SOD123F (Type B) 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See S1MWF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 1,000 V VRWM DC Blocking Voltage V RM RMS Reverse Voltage V 700 V R(RMS) Average Rectified Output Current T = +100C I 1.0 A T O Non-Repetitive Peak Forward Surge Current 30 A I FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Case (Note 5) 8 C/W R JC Typical Thermal Resistance Junction to Ambient (Note 5) R 56 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V 1,000 V I = 5A (BR)R R I = 1A, T = +25C F J 0.95 1.1 0.85 1.0 I = 1A, T = +125C F J Forward Voltage Drop V V F 1.0 I = 2A, T = +25C F J 0.9 I = 2A, T = +125C F J 0.15 5.0 VR = 1,000V, TJ = +25C Leakage Current (Note 6) I A R 6 100 V = 1,000V, T = +125C R J Reverse Recovery Time 1.5 3.0 s t I = 0.5A, I = 1.0A, I = 0.25A RR F R RR Total Capacitance C 7 pF V = 4.0V , f = 1MHz T R DC Notes: 5. Device mounted on FR-4 substrate, 1.0 x 1.0 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 S1MWF November 2016 Diodes Incorporated www.diodes.com Document number: DS36899 Rev. 9 - 2 ADVANCED INFORMATION