SB170 - SB1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency A B A Surge Overload Rating to 25A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application High Temperature Soldering: 260 C/10 Second at Terminal Lead Free Finish, RoHS Compliant (Note 3) C D Mechanical Data Case: DO-41 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 DO-41 Moisture Sensitivity: Level 1 per J-STD-020C Dim Min Max Terminals: Finish Bright Tin. Plated Leads - Solderable per A 25.4 MIL-STD-202, Method 208 B 4.1 5.2 Polarity: Cathode Band C 0.71 0.86 Mounting Position: Any D 2.0 2.7 Ordering Information: See Last Page All Dimensions in mm Marking: Type Number Weight: 0.3 grams (approximate) T = 25 C unless otherwise specified A Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB170 SB180 SB190 SB1100 Unit V Peak Repetitive Reverse Voltage RRM V Working Peak Reverse Voltage RWM 70 80 90 100 V V DC Blocking Voltage R RMS Reverse Voltage V 49 56 63 70 V R(RMS) Average Rectified Output Current T = 85 C I 1.0 A T O Non-Repetitive Peak Forward Surge Current 8.3ms I single half sine-wave superimposed on rated load FSM 25 A (JEDEC Method) Forward Voltage I = 1.0A T = 25 C V F A FM 0.80 V Peak Reverse Current T = 25 C A 0.5 I mA RM at Rated DC Blocking Voltage T = 100 C 10 A C Typical Junction Capacitance (Note 2) j 80 pF Typical Thermal Resistance Junction to Lead R 15 K/W JL Typical Thermal Resistance Junction to Ambient (Note 1) R 50 K/W JA Operating and Storage Temperature Range T T j, STG -65 to +125 C Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS30116 Rev. 3 - 1 1 of 2 SB170 - SB1100 www.diodes.com Diodes Incorporated NEW PRODUCT20 10 1.0 1.0 0.5 T=25C j 0 0.1 25 50 75 100 125 150 0.1 0.5 0.9 1.3 1.7 2.1 T , LEAD TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) L F Fig.2 Typical Forward Characteristics Fig. 1 Forward Current Derating Curve 1000 40 T = 25C Single Half Sine-Wave j (JEDEC Method) f = 1.0MHz T = 150C j 30 100 20 10 10 0 0.1 1 10 100 1 10 100 V , REVERSE VOLTAGE (V) R NUMBER OF CYCLES AT 60 Hz Fig. 4 Typical Junction Capacitance Fig. 3 Max Non-Repetitive Peak Fwd Surge Current (Note 4) Ordering Information Device Packaging Shipping SB170-A DO-41 5K/Ammo Pack SB170-B DO-41 1K/Bulk SB170-T DO-41 5K/Tape & Reel, 13-inch SB180-A DO-41 5K/Ammo Pack SB180-B DO-41 1K/Bulk SB180-T DO-41 5K/Tape & Reel, 13-inch SB190-A DO-41 5K/Ammo Pack SB190-B DO-41 1K/Bulk SB190-T DO-41 5K/Tape & Reel, 13-inch SB1100-A DO-41 5K/Ammo Pack SB1100-B DO-41 1K/Bulk SB1100-T DO-41 5K/Tape & Reel, 13-inch Notes: 4. For packaging details, visit our website at