X-On Electronics has gained recognition as a prominent supplier of UMC4NQ-7 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMC4NQ-7 Bipolar Transistors - Pre-Biased are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

UMC4NQ-7 Diodes Incorporated

UMC4NQ-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.UMC4NQ-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased Pre-bias Transistor
Datasheet: UMC4NQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4485 ea
Line Total: USD 0.45

Availability - 5693
Ship by Mon. 12 Aug to Wed. 14 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Tue. 13 Aug to Fri. 16 Aug
MOQ : 5
Multiples : 5
5 : USD 0.0776
50 : USD 0.0755
150 : USD 0.0741
500 : USD 0.0729

5693
Ship by Mon. 12 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4485
10 : USD 0.3163
100 : USD 0.1311
1000 : USD 0.0978
3000 : USD 0.077
9000 : USD 0.0667
24000 : USD 0.0621
45000 : USD 0.0598

   
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We are delighted to provide the UMC4NQ-7 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMC4NQ-7 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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UMC4NQ DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT353 Surface Mount Package Suited for Automated Assembly Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Simplifies Circuit Design and Reduces Board Space Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Terminals: Finish Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 e3 Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Weight: 0.006 grams (Approximate) SOT353 (1) (3) (2) Q 3 2 1 1 R1 R2 R = 47k 1 R = 47k 2 R2 Q Q 1 2 Q 2 R = 10k 1 R1 R = 47k 2 4 5 (4) (5) Top View Bottom View Package Pin Out Device Schematic Configuration Ordering Information (Notes 4 & 5) Part Number Compliance Marking Reel Size (inch) Tape Width (mm) Quantity per Reel UMC4NQ-7 Automotive NP1 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See UMC4NQ Absolute Maximum Ratings, Pre-Biased NPN Transistor, Q ( T = +25C unless otherwise specified.) A 1 Characteristic Symbol Value Unit Supply Voltage 50 V V CC Input Voltage -10 to +40 V V IN Output Current 30 mA I O Collector Current 100 mA I C Absolute Maximum Ratings, Pre-Biased PNP Transistor, Q ( T = +25C unless otherwise specified.) 2 A Characteristic Symbol Value Unit Supply Voltage -50 V V CC Input Voltage -40 to +6 V V IN Output Current -100 mA I O Collector Current -100 mA I C Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 290 mW D Thermal Resistance, Junction to Ambient Air (Note 6) 430 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Note: 6. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. Electrical Characteristics, Pre-Biased NPN Transistor, Q ( T = +25C unless otherwise specified.) A 1 Characteristic Symbol Min Typ Max Unit Test Condition (Note 7) 0.5 V V V = 5V, I = 100A I(OFF) CC O Input Voltage (Note 8) 3 V V V = 0.3V, I = 2mA I(ON) O O Output Voltage 0.1 0.3 V V I / I = 10mA/0.5 mA O(ON) O I Input Current 0.18 mA I V = 5V I I Output Current 0.5 I A V = 50V, V = 0V O(OFF) CC I DC Current Gain G 68 V = 5V, I = 5mA I O O Gain-Bandwidth Product (Note 9) f 250 MHz V = 10V, I = -5mA, f = 100MHz T CE E Input Resistance R 32.9 47 61.1 k 1 Resistance Ratio R /R 0.8 1 1.2 2 1 Notes: 7. The device is guaranteed to be in OFF state with V up to 0.5V. I(OFF) 8. The device is guaranteed to be in ON state with V starting from 3V. I(ON) 9. Characteristic of Transistor for reference only. Electrical Characteristics, Pre-Biased PNP Transistor, Q ( T = +25C unless otherwise specified.) A 2 Characteristic Symbol Min Typ Max Unit Test Condition (Note 10) V -0.3 V V = -5V, I = -100A I(OFF) CC O Input Voltage (Note 11) V -1.4 V V = -0.3V, I = -1mA I(ON) O O Output Voltage V -0.1 -0.3 V I / I = -5mA/-0.25 mA O(ON) O I Input Current I -0.88 mA V = -5V I I Output Current I -0.5 A V = -50V, V = 0V O(OFF) CC I DC Current Gain 68 G V = -5V, I = -5mA I O O Gain-Bandwidth Product (Note 9) 250 MHz f V = -10V, I = 5mA, f = 100MHz T CE E Input Resistance 7 10 13 R k 1 Resistance Ratio 3.7 4.7 5.7 R /R 2 1 Notes: 10. The device is guaranteed to be in OFF state with V up to -0.3V. I(OFF) 11. The device is guaranteed to be in ON state with V starting from -1.4V. I(ON) 2 of 6 UMC4NQ February 2017 Diodes Incorporated www.diodes.com Document number: DS39470 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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