X-On Electronics has gained recognition as a prominent supplier of BAV199W Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAV199W Small Signal Switching Diodes are a product manufactured by Diotec. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

BAV199W Diotec

BAV199W electronic component of Diotec
BAV199W Diotec
BAV199W Small Signal Switching Diodes
BAV199W  Semiconductors

Images are for reference only
See Product Specifications
Part No. BAV199W
Manufacturer: Diotec
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes Small Signal Diode, SOT-323, 85V, 0.14A, 150C
Datasheet: BAV199W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 0.042 ea
Line Total: USD 1.05 
Availability - 3370
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ: 25  Multiples: 25
Pack Size: 25
Availability Price Quantity
5925
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1397
10 : USD 0.1034
100 : USD 0.0869
500 : USD 0.0693
1000 : USD 0.0605
3000 : USD 0.0451
9000 : USD 0.0297
24000 : USD 0.0297
45000 : USD 0.0253

3370
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 25
Multiples : 25
25 : USD 0.042
100 : USD 0.0322
500 : USD 0.028
700 : USD 0.0252
1875 : USD 0.0238

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
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We are delighted to provide the BAV199W from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV199W and other electronic components in the Small Signal Switching Diodes category and beyond.

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W E E E S H BAS16W, BAW56W, BAV70W, BAV99W, BAV199W BAS16W, BAW56W, BAV70W, BAV99W, BAV199W I = 150 mA V = 85 V FAV RRM V < 0.715 V I = 2 A F1 FSM1 SMD Small Signal Diodes Tjmax = 150C trr < 4 ns SMD Kleinsignal-Dioden Version 2021-07-01 SOT-323 Typical Applications Typische Anwendungen Signal processing, High-speed Signalverarbeitung, Schnelles Schalten, 3 Switching, Rectifying Gleichrichten Commercial grade Standardausfhrung 1 1 Suffix -Q: AEC-Q101 compliant ) Suffix -Q: AEC-Q101 konform ) 1 1 Suffix -AQ: in AEC-Q101 qualification ) Suffix -AQ: in AEC-Q101 Qualifikation ) 1 Features Besonderheiten Very high switching speed Extrem schnelles Schalten 2 Low junction capacitance Niedrige Sperrschichtkapazitt Low leakage current Niedriger Sperrstrom Compliant to RoHS (w/o exemp.) Konform zu RoHS (ohne Ausn.) 1 1 Pb REACH, Conflict Minerals ) REACH, Konfliktmineralien ) 1 1 Mechanical Data ) Mechanische Daten ) 1 SPICE Model & STEP File ) Taped and reeled 3000 / 7 Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. Marking Code Case material UL 94V-0 Gehusematerial See below XX Siehe unten XX Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen HS Code 85411000 MSL = 1 BAS16W Single BAV70W/-AQ Common A6 Diode PH Cathode BAV99W A7 BAW56W Common Series YX Anode Connection BAV199W/-AQ JY 1 2 Maximum ratings ) Grenzwerte ) 2 Power dissipation (per device) Verlustleistung (pro Bauteil) P 200 mW ) tot 3 Maximum forward current, single diode loaded BAS16W, BAW56W, BAV99W 150 mA ) 3 Dauergrenzstrom, eine Diode belastet BAV199W/-AQ I 160 mA ) FAV 3 BAV70W/-AQ 175 mA ) 3 Maximum forward current, both diodes loaded BAV199W/-AQ 140 mA ) 3 Dauergrenzstrom, beide Dioden belastet BAW56W, BAV99W I 125 mA ) FAV 3 BAV70W/-AQ 100 mA ) 3 Repetitive peak forward current Periodischer Spitzenstrom I 300 mA ) FRM Non repetitive peak forward surge current t 1 s 0.5 A p Stostrom-Grenzwert tp 1 ms IFSM 1 A t 1 s 2 A p 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 1 T = 25C and per diode, unless otherwise specified T = 25C und pro Diode, wenn nicht anders angegeben A A 2 2 2 Mounted on 3 mm copper pads per terminal Montage auf 3 mm Kupferbelag (Ltpads) je Anschluss Diotec Semiconductor AG BAS16W, BAW56W, BAV70W, BAV99W, BAV199W 1 2 Maximum ratings ) Grenzwerte ) Repetitive peak reverse voltage BAS16W, BAW56W, BAV99W, BAV199W/-AQ 85 V V RRM Periodische Spitzensperrspannung BAV70W/-AQ 100 V Reverse voltage BAS16W, BAW56W, BAV99W, BAV70W/-AQ 75 V DC V R Sperrspannung BAV199W/-AQ 85 V Junction temperature Sperrschichttemperatur T j -55...+150C Storage temperature Lagerungstemperatur T S Characteristics Kennwerte BAS16W BAW56W BAV70W BAV199W/-AQ BAV99W Forward voltage 1 mA < 715 mV < 715 mV < 900 mV Durchlass-Spannung 10 mA < 855 mV < 855 mV < 1.0 V Tj = 25C IF = VF 2 ) 50 mA < 1.0 V < 1.0 V < 1.1 V 150 mA < 1.25 V < 1.25 V < 1.25 V Leakage current 25 V < 30 nA < 30 nA T = 25C V = I j R R Sperrstrom 75 V < 1.0 A < 2.5 A < 5 nA 1 ) 25 V < 30 A < 30 A Tj = 150C VR = IR 75 V < 50 A < 50 A < 80 nA Junction capacitance V = 0 V, f = 1 MHz C < 2 pF typ 2 pF R T Sperrschichtkapazitt Reverse recovery time I = 10 mA ber/through F t < 4 ns < 3000 ns rr Sperrverzug I = 10 mA bis/to I = 1 mA R R Typical thermal resistance junction to ambient 3 R 400 K/W ) thA Typischer Wrmewiderstand Sperrschicht-Umgebung Dimensions Mae mm 120 1 % A 100 -1 10 80 T = 125C j -2 10 60 40 T = 25C j -3 10 20 I F P tot -4 10 0 V 0 T 50 100 150 C 0 0.4 0.6 0.8 1.0 V 1.4 A F 2 Forward characteristics (typical values) Power dissipation versus ambient temperature ) 2 Durchlasskennlinien (typische Werte) Verlustleistung in Abh. von d. Umgebungstemp. ) Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 T = 25C and per diode, unless otherwise specified T = 25C und pro Diode, wenn nicht anders angegeben A A 2 Tested with pulses t = 300 s, duty cycle 2% p Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% 2 3 Mounted on 3 mm copper pads per terminal 2 Montage auf 3 mm Kupferbelag (Ltpads) je Anschluss 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Diotec Electronics
DIOTEC SEMICONDUCTOR
DIOTEC SEMICONDUCTOR AG
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