X-On Electronics has gained recognition as a prominent supplier of P4SMAJ100CA ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. P4SMAJ100CA ESD Suppressors / TVS Diodes are a product manufactured by Diotec. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

P4SMAJ100CA Diotec

P4SMAJ100CA electronic component of Diotec
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Part No.P4SMAJ100CA
Manufacturer: Diotec
Category: ESD Suppressors / TVS Diodes
Description: Diode: transil; 400W; 111÷123V; bidirectional; DO214AC
Datasheet: P4SMAJ100CA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2063 ea
Line Total: USD 1.03 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 5
Multiples : 1
5 : USD 0.2063
50 : USD 0.1072
250 : USD 0.0787
258 : USD 0.061
709 : USD 0.057

   
Manufacturer
Product Category
Breakdown Voltage
Mounting
Case
Semiconductor Structure
Kind Of Package
Type Of Diode
Max Off-State Voltage
Power Dissipation
Leakage Current
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We are delighted to provide the P4SMAJ100CA from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P4SMAJ100CA and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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W E E E S H P4SMAJ5.0 ... P4SMAJ170CA P = 400 W V = 5.0 ... 170 V P4SMAJ5.0 ... P4SMAJ170CA PPM WM P = 1.0 W V = 6.8 ... 200 V M(AV) BR SMD Transient Voltage Suppressor Diodes Tjmax = 150C SMD Spannungs-Begrenzer-Dioden Version 2021-08-19 SMA Typical Applications Typische Anwendungen ~ DO-214AC Over-voltage protection Schutz gegen berspannung ESD protection ESD-Schutz Free-wheeling diodes Freilauf-Dioden Commercial grade Standardausfhrung 1 1 Suffix -Q: AEC-Q101 compliant ) Suffix -Q: AEC-Q101 konform ) 1 1 Suffix -AQ: AEC-Q101 qualified ) Suffix -AQ: AEC-Q101 qualifiziert ) Features Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 s waveform) (10/1000 s Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Further available: P4SMA220...550CA Auch erhltlich: P4SMA220...550CA mit 1 SPICE Model & STEP File ) having V = 220 ... 550 V V = 220 ... 550V BR BR Compliant to RoHS (exemp. 7a) Konform zu RoHS (Ausn. 7a) Pb 1 1 REACH, Conflict Minerals ) REACH, Konfliktmineralien ) 1 1 unidir. (A) Mechanical Data ) Mechanische Daten ) Taped and reeled 7500 / 13 Gegurtet auf Rolle Weight approx. 0.07 g Gewicht ca. bidir. (CA) Case material UL 94V-0 Gehusematerial Marking VWM only. Cathode mark Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen only at unidirectional types MSL = 1 Nur VWM. Kathoden-Markierung nur bei unidirektionalen Typen HS Code 85411000 For bidirectional types (suffix C or CA), electrical characteristics apply in both directions. Fr bidirektionale Dioden (mit Suffix C oder CA) gelten die elektrischen Werte in beiden Richtungen. 2 2 Maximum ratings ) Grenzwerte ) Peak pulse power dissipation (10/1000 s waveform) 3 T = 25C P 400 W ) A PPM Impuls-Verlustleistung (Strom-Impuls 10/1000 s) Steady state power dissipation Verlustleistung im Dauerbetrieb T = 75C P 1 W T M(AV) Peak forward surge current Half sine-wave 4 I 60 Hz (8.3 ms) 40 A ) FSM Stostrom in Fluss-Richtung Sinus-Halbwelle Junction temperature Sperrschichttemperatur Tj -50...+150C Storage temperature Lagerungstemperatur T -50...+150C S Characteristics Kennwerte 4 Max. instantaneous fwd. voltage Augenblickswert Durchlass-Spg. I = 25 A V 200 V V < 3.5 V ) F BR F 5 Typ. thermal resistance junction to ambient Typ. Wrmewiderstand Sperrschicht-Umgebung RthA 70 K/W ) Typ. thermal resistance junction to terminal Typ. Wrmewiderstand Sperrschicht-Anschluss R 30 K/W thT 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 T = 25C unless otherwise specified T = 25C wenn nicht anders angegeben A A 3 Non-repetitive pulse see curve I = f (t) / P = f (t) PP PP Hchstzulssiger Spitzenwert eines einmaligen Impulses, siehe Kurve I = f (t) / P = f (t) PP PP 4 Unidirectional diodes only Nur fr unidirektionale Dioden 2 2 5 Mounted on PCB with 25 mm copper pads per terminal Montage auf Leiterplatte mit 25 mm Ltpad je Anschluss Diotec Semiconductor AG P4SMAJ5.0 ... P4SMAJ170CA Characteristics (T = 25C) Kennwerte (T = 25C) j j 1 Type ) Stand-off Max. rev. current Breakdown voltage at Max. clamping voltage Typ voltage Max. Sperrstrom Abbruch-Spannung bei Max. Begrenzer-Spannung Q A 2 3 ) -Q ) -AQ ) Sperrspannung at / bei VWM ) IT = 1 mA *) 10 mA at / bei IPPM (10/1000 s) unidirectional bidirectional VWM V ID A VBR min V VBR max V VC V IPPM A P4SMAJ5.0 P4SMAJ5.0C 5.0 800 6.4 *) 7.8 *) 10.3 38.8 P4SMAJ5.0A P4SMAJ5.0CA 5.0 800 6.4 *) 7.0 *) 9.2 43.5 P4SMAJ6.5 P4SMAJ6.5C 6.5 500 7.2 *) 8.8 *) 12.3 32.5 P4SMAJ6.5A P4SMAJ6.5CA 6.5 500 7.2 *) 8.0 *) 11.2 35.7 P4SMAJ7.0 P4SMAJ7.0C 7.0 200 7.8 *) 9.5 *) 13.3 30.1 P4SMAJ7.0A P4SMAJ7.0CA 7.0 200 7.8 *) 8.7 *) 12.0 33.3 P4SMAJ7.5 P4SMAJ7.5C 7.5 100 8.3 10.1 14.3 28.0 P4SMAJ7.5A P4SMAJ7.5CA 7.5 100 8.3 9.2 12.9 31.0 P4SMAJ8.0 P4SMAJ8.0C 8.0 50 8.9 10.9 15.0 26.7 P4SMAJ8.0A P4SMAJ8.0CA 8.0 50 8.9 9.9 13.6 29.4 P4SMAJ8.5 P4SMAJ8.5C 8.5 10 9.4 11.5 15.9 25.2 P4SMAJ8.5A P4SMAJ8.5CA 8.5 10 9.4 10.4 14.4 27.8 P4SMAJ9.0 P4SMAJ9.0C 9.0 5 10.0 12.2 16.9 23.7 P4SMAJ9.0A P4SMAJ9.0CA 9.0 5 10.0 11.1 15.4 26.0 P4SMAJ10 P4SMAJ10C 10 5 11.1 13.5 18.8 21.3 A A P4SMAJ10A ) P4SMAJ10CA ) 10 5 11.1 12.3 17.0 23.5 P4SMAJ11 P4SMAJ11C 11 5 12.2 14.9 20.1 19.9 A A P4SMAJ11A ) P4SMAJ11CA ) 11 5 12.2 13.5 18.2 22.0 P4SMAJ12 P4SMAJ12C 12 5 13.3 16.2 22.0 18.2 Q A Q A Q A P4SMAJ12A ) P4SMAJ12CA ) 12 5 / 1 ) 13.3 14.8 19.9 20.1 P4SMAJ13 P4SMAJ13C 13 5 14.4 17.6 23.8 16.8 A Q A P4SMAJ13A ) P4SMAJ13CA ) 13 5 14.4 16.0 21.5 18.6 P4SMAJ14 P4SMAJ14C 14 5 15.6 19.0 25.8 15.5 A A P4SMAJ14A ) P4SMAJ14CA ) 14 5 15.6 17.3 23.2 17.2 P4SMAJ15 P4SMAJ15C 15 5 16.7 20.4 26.9 14.9 Q A A P4SMAJ15A ) P4SMAJ15CA ) 15 5 16.7 18.6 24.4 16.4 P4SMAJ16 P4SMAJ16C 16 5 17.8 21.7 28.8 13.9 A A P4SMAJ16A ) P4SMAJ16CA ) 16 5 17.8 19.8 26.0 15.4 P4SMAJ17 P4SMAJ17C 17 5 18.9 23.1 30.5 13.1 A A P4SMAJ17A ) P4SMAJ17CA ) 17 5 18.9 21.0 27.6 14.5 P4SMAJ18 P4SMAJ18C 18 5 20.0 24.4 32.2 12.4 Q A A P4SMAJ18A ) P4SMAJ18CA ) 18 5 20.0 22.2 29.2 13.7 P4SMAJ20 P4SMAJ20C 20 5 22.2 27.1 35.8 11.2 A A P4SMAJ20A ) P4SMAJ20CA ) 20 5 22.2 24.6 32.4 12.3 P4SMAJ22 P4SMAJ22C 22 5 24.4 29.8 39.4 10.2 A A P4SMAJ22A ) P4SMAJ22CA ) 22 5 24.4 27.1 35.5 11.3 P4SMAJ24 P4SMAJ24C 24 5 26.7 32.6 43.0 9.3 A A P4SMAJ24A ) P4SMAJ24CA ) 24 5 26.7 29.6 38.9 10.3 P4SMAJ26 P4SMAJ26C 26 5 28.9 35.3 46.6 8.6 A A 1 A P4SMAJ26A ) P4SMAJ26CA ) 26 5 /1 ) 28.9 32.1 42.1 9.5 P4SMAJ28 P4SMAJ28C 28 5 31.1 37.9 50.0 8.0 A Q A P4SMAJ28A ) P4SMAJ28CA ) 28 5 31.1 34.5 45.4 8.8 P4SMAJ30 P4SMAJ30C 30 5 33.3 40.1 53.5 7.5 A Q A P4SMAJ30A ) P4SMAJ30CA ) 30 5 33.3 36.9 48.4 8.3 P4SMAJ33 P4SMAJ33C 33 5 36.7 44.8 59.0 6.8 Q A Q A P4SMAJ33A ) P4SMAJ33CA ) 33 5 36.7 40.7 53.3 7.5 P4SMAJ36 P4SMAJ36C 36 5 40.0 48.4 64.3 6.2 1 Footnotes see last page Funoten siehe letzte Seite 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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