X-On Electronics has gained recognition as a prominent supplier of P6SMBJ5.0CA ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. P6SMBJ5.0CA ESD Suppressors / TVS Diodes are a product manufactured by Diotec. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

P6SMBJ5.0CA Diotec

P6SMBJ5.0CA electronic component of Diotec
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Part No.P6SMBJ5.0CA
Manufacturer: Diotec
Category: ESD Suppressors / TVS Diodes
Description: Diode: transil; 600W; 6.4÷7V; bidirectional; ±5%; DO214AA
Datasheet: P6SMBJ5.0CA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2016 ea
Line Total: USD 1.01 
Availability - 8400
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
8400
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2016
25 : USD 0.0935
100 : USD 0.0753
265 : USD 0.0647
730 : USD 0.0612
3000 : USD 0.0602

8400
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1165
Multiples : 5
1165 : USD 0.0671
3000 : USD 0.065

   
Manufacturer
Product Category
Breakdown Voltage
Case
Mounting
Semiconductor Structure
Kind Of Package
Type Of Diode
Max Off-State Voltage
Power Dissipation
Leakage Current
Tolerance
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We are delighted to provide the P6SMBJ5.0CA from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P6SMBJ5.0CA and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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W E E E S H P6SMBJ5.0 ... P6SMBJ170CA P = 600 W V = 5.0 ... 170 V P6SMBJ5.0 ... P6SMBJ170CA PPM WM P = 5.0 W V = 6.8 ... 200 V M(AV) BR SMD Transient Voltage Suppressor Diodes Tjmax = 150C SMD Spannungs-Begrenzer-Dioden Version 2016-07-04 Typical Applications Typische Anwendungen ~ SMB / ~ DO-214AA Over-voltage protection Schutz gegen berspannung 0.5 5.4 ESD protection ESD-Schutz Free-wheeling diodes Freilauf-Dioden 1 1 Commercial grade ) Standardausfhrung ) Features Besonderheiten 1.1 0.15 Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 600 W 600 W Impuls-Verlustleistung (10/1000 s waveform) (10/1000 s Strom-Impuls) Type Very fast response time Sehr schnelle Ansprechzeit Typ Further available: P6SMB220...550CA Auch erhltlich: P6SMB220...550CA having VBR = 220 ... 550 V mit VBR = 220 ... 550V Compliant to RoHS, REACH, Konform zu RoHS, REACH, 0.5 Pb 4.6 1 1 Conflict Minerals ) Konfliktmineralien ) 1 1 Mechanical Data ) Mechanische Daten ) Dimensions - Mae mm Taped and reeled 3000 / 13 Gegurtet auf Rolle Type Code = V . Cathode mark WM Weight approx. 0.1 g Gewicht ca. only at unidirectional types Case material UL 94V-0 Gehusematerial Typ-Code = V . Kathoden-Markierung WM Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen nur bei unidirektionalen Typen MSL = 1 For bidirectional types (suffix C or CA), electrical characteristics apply in both directions. Fr bidirektionale Dioden (mit Suffix C oder CA) gelten die elektrischen Werte in beiden Richtungen. 2 2 Maximum ratings ) Grenzwerte ) 3 Peak pulse power dissipation (10/1000 s waveform) T = 25C P 600 W ) A PPM Impuls-Verlustleistung (Strom-Impuls 10/1000 s) Steady state power dissipation Verlustleistung im Dauerbetrieb TT = 75C P 5 W M(AV) 4 Peak forward surge current (half sine) Stostrom (Sinushalbw.) 60 Hz T = 25C I 100 A ) A FSM Junction temperature Sperrschichttemperatur T -50...+150C j Storage temperature Lagerungstemperatur T -50...+150C S Characteristics Kennwerte 4 Max. instantaneous forward I = 25 A V 200 V V < 3.0 V ) F F BR voltage Augenblickswert der Durchlass-Spannung 5 Thermal resistance junction to ambien Wrmewiderstand Sperrschicht Umgebung R < 45 K/W ) thA Thermal resistance junction to terminal Wrmewiderstand Sperrschicht Anschluss RthT < 15 K/W 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 Tj = 25C unless otherwise specified Tj = 25C wenn nicht anders angegeben 3 Non-repetitive pulse see curve I = f (t) / P = f (t) PP PP Hchstzulssiger Spitzenwert eines einmaligen Impulses, siehe Kurve I = f (t) / P = f (t) PP PP 4 Unidirectional diodes only Nur fr unidirektionale Dioden 2 5 Mounted on P.C. board with 25 mm copper pads at each terminal 2 Montage auf Leiterplatte mit 25 mm Kupferbelag (Ltpad) an jedem Anschluss Diotec Semiconductor AG P6SMBJ5.0 ... P6SMBJ170CA Characteristics (T = 25C) Kennwerte (T = 25C) j j Type Stand-off Max. rev. current Breakdown voltage at I = 1 mA Max. clamping voltage T Typ voltage Max. Sperrstrom Abbruch-Spannung bei IT = 1 mA Max. Begrenzer-Spannung 1 Sperrspannung at / bei V ) *) at / bei I = 10 mA at / bei I (10/1000 s) WM T PPM unidire bidire V V I A V min V V max V V V I A WM D BR BR C PPM P6SMBJ5.0 P6SMBJ5.0C 5.0 800 6.4 *) 7.8 *) 10.3 58.3 P6SMBJ5.0A P6SMBJ5.0CA 5.0 800 6.4 *) 7.0 *) 9.2 65.2 P6SMBJ6.0 P6SMBJ6.0C 6.0 800 6.7 *) 8.2 *) 11.4 52.6 P6SMBJ6.0A P6SMBJ6.0CA 6.0 800 6.7 *) 7.4 *) 10.3 58.3 P6SMBJ6.5 P6SMBJ6.5C 6.5 500 7.2 *) 8.8 *) 12.3 48.8 P6SMBJ6.5A P6SMBJ6.5CA 6.5 500 7.2 *) 8.0 *) 11.2 53.6 P6SMBJ7.0 P6SMBJ7.0C 7.0 200 7.8 *) 9.5 *) 13.3 45.1 P6SMBJ7.0A P6SMBJ7.0CA 7.0 200 7.8 *) 8.7 *) 12.0 50.0 P6SMBJ7.5 P6SMBJ7.5C 7.5 100 8.3 10.1 14.3 42.0 P6SMBJ7.5A P6SMBJ7.5CA 7.5 100 8.3 9.2 12.9 46.5 P6SMBJ8.0 P6SMBJ8.0C 8.0 50 8.9 10.9 15.0 40.0 P6SMBJ8.0A P6SMBJ8.0CA 8.0 50 8.9 9.9 13.6 44.1 P6SMBJ8.5 P6SMBJ8.5C 8.5 10 9.4 11.5 15.9 37.7 P6SMBJ8.5A P6SMBJ8.5CA 8.5 10 9.4 10.4 14.4 41.7 P6SMBJ9.0 P6SMBJ9.0C 9.0 5 10.0 12.2 16.9 35.5 P6SMBJ9.0A P6SMBJ9.0CA 9.0 5 10.0 11.1 15.4 39.0 P6SMBJ10 P6SMBJ10C 10 5 11.1 13.5 18.8 31.9 P6SMBJ10A P6SMBJ10CA 10 5 11.1 12.3 17.0 35.3 P6SMBJ11 P6SMBJ11C 11 5 12.2 14.9 20.1 29.9 P6SMBJ11A P6SMBJ11CA 11 5 12.2 13.5 18.2 33.0 P6SMBJ12 P6SMBJ12C 12 5 13.3 16.2 22.0 27.3 P6SMBJ12A P6SMBJ12CA 12 5 13.3 14.8 19.9 30.2 P6SMBJ13 P6SMBJ13C 13 5 14.4 17.6 23.8 25.2 P6SMBJ13A P6SMBJ13CA 13 5 14.4 16.0 21.5 27.9 P6SMBJ14 P6SMBJ14C 14 5 15.6 19.0 25.8 23.3 P6SMBJ14A P6SMBJ14CA 14 5 15.6 17.3 23.2 25.9 P6SMBJ15 P6SMBJ15C 15 5 16.7 20.4 26.9 22.3 P6SMBJ15A P6SMBJ15CA 15 5 16.7 18.6 24.4 24.6 P6SMBJ16 P6SMBJ16C 16 5 17.8 21.7 28.8 20.8 P6SMBJ16A P6SMBJ16CA 16 5 17.8 19.8 26.0 23.1 P6SMBJ17 P6SMBJ17C 17 5 18.9 23.1 30.5 19.7 P6SMBJ17A P6SMBJ17CA 17 5 18.9 21.0 27.6 21.7 P6SMBJ18 P6SMBJ18C 18 5 20.0 24.4 32.2 18.6 P6SMBJ18A P6SMBJ18CA 18 5 20.0 22.2 29.2 20.5 P6SMBJ20 P6SMBJ20C 20 5 22.2 27.1 35.8 16.8 P6SMBJ20A P6SMBJ20CA 20 5 22.2 24.6 32.4 18.5 P6SMBJ22 P6SMBJ22C 22 5 24.4 29.8 39.4 15.2 P6SMBJ22A P6SMBJ22CA 22 5 24.4 27.1 35.5 16.9 P6SMBJ24 P6SMBJ24C 24 5 26.7 32.6 43.0 14.0 P6SMBJ24A P6SMBJ24CA 24 5 26.7 29.6 38.9 15.4 P6SMBJ26 P6SMBJ26C 26 5 28.9 35.3 46.6 12.9 P6SMBJ26A P6SMBJ26CA 26 5 28.9 32.1 42.1 14.3 P6SMBJ28 P6SMBJ28C 28 5 31.1 37.9 50.0 12.0 P6SMBJ28A P6SMBJ28CA 28 5 31.1 34.5 45.4 13.2 P6SMBJ30 P6SMBJ30C 30 5 33.3 40.1 53.5 11.2 P6SMBJ30A P6SMBJ30CA 30 5 33.3 36.9 48.4 12.4 P6SMBJ33 P6SMBJ33C 33 5 36.7 44.8 59.0 10.2 1 Bi-directional types with V 10V have double reverse current limit Bidirektionale Typen mit V 10V haben die doppelte Sperrstromgrenze WM WM 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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