X-On Electronics has gained recognition as a prominent supplier of TGL34-8.2C ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. TGL34-8.2C ESD Suppressors / TVS Diodes are a product manufactured by Diotec. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

TGL34-8.2C Diotec

TGL34-8.2C electronic component of Diotec
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Part No.TGL34-8.2C
Manufacturer: Diotec
Category: ESD Suppressors / TVS Diodes
Description: Diode TVS Single Bi-Dir 6.6V 150W Automotive 2-Pin Mini-MELF T/R
Datasheet: TGL34-8.2C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
102: USD 0.0725 ea
Line Total: USD 7.4 
Availability - 0
MOQ: 102  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 102
Multiples : 1
102 : USD 0.0725
250 : USD 0.0684

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TGL34-8.2C from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TGL34-8.2C and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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W E E E S H TGL34-6.8 ... TGL34-200CA P = 150 W V = 5.5 ... 171 V TGL34-6.8 ... TGL34-200CA PPM WM P = 1.0 W V = 6.8 ... 200 V M(AV) BR SMD Transient Voltage Suppressor Diodes Tjmax = 150C SMD Spannungs-Begrenzer-Dioden Version 2016-05-30 Typical Applications Typische Anwendungen DO-213AA Over-voltage protection Schutz gegen berspannung Plastic MiniMELF ESD protection ESD-Schutz Free-wheeling diodes Freilauf-Dioden 1 1 Commercial grade ) Standardausfhrung ) Features Besonderheiten Package compatible to SOD-87 Gehuse kompatibel zu SOD-87 Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 150 W 150 W Impuls-Verlustleistung Very fast response time Sehr schnelle Ansprechzeit Compliant to RoHS, REACH, Konform zu RoHS, REACH, Pb 1 1 Conflict Minerals ) Konfliktmineralien ) 1 1 Mechanical Data ) Mechanische Daten ) Taped and reeled 2500 / 7 Gegurtet auf Rolle Dimensions - Mae mm Weight approx. 0.04 g Gewicht ca. Cathode mark Case material UL 94V-0 Gehusematerial only at unidirectional types Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen Kathoden-Markierung nur bei unidirektionalen Typen MSL = 1 Marking: One blue ring denotes cathode and TVS-Diode family at unidirectional devices The type numbers are noted only on the label on the reel Kennzeichnung: Ein blauer Ring kennzeichnet Kathode und TVS-Dioden-Familie bei unidirektionalen Bauteilen. Die Typenbezeichnungen sind nur auf dem Rollenaufkleber vermerkt For bidirectional types (suffix C or CA), electrical characteristics apply in both directions. Fr bidirektionale Dioden (mit Suffix C oder CA) gelten die elektrischen Werte in beiden Richtungen. 2 2 Maximum ratings ) Grenzwerte ) 3 Peak pulse power dissipation (10/1000 s waveform) T = 25C P 150 W ) A PPM Impuls-Verlustleistung (Strom-Impuls 10/1000 s) 4 Steady state power dissipation Verlustleistung im Dauerbetrieb TA = 25C P 1 W ) M(AV) 5 Peak forward surge current (half sine) Stostrom (Sinushalbw.) 60 Hz T = 25C I 20 A ) A FSM Junction temperature Sperrschichttemperatur T -50...+150C j Storage temperature Lagerungstemperatur T -50...+150C S Characteristics Kennwerte 5 Max. instantaneous forward voltageAugenblickswert der Durchlass-Spannung I = 10 A V < 3.5 V ) F F 4 Thermal resistance junction to ambien Wrmewiderstand Sperrschicht Umgebung R < 75 K/W ) thA Thermal resistance junction to terminal Wrmewiderstand Sperrschicht Anschluss R < 40 K/W thT 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 T = 25C unless otherwise specified T = 25C wenn nicht anders angegeben j j 3 Non-repetitive pulse see curve I = f (t) / P = f (t) PP PP Hchstzulssiger Spitzenwert eines einmaligen Impulses, siehe Kurve I = f (t) / P = f (t) PP PP 2 4 Mounted on P.C. board with 25 mm copper pads at each terminal 2 Montage auf Leiterplatte mit 25 mm Kupferbelag (Ltpad) an jedem Anschluss 5 Unidirectional diodes only Nur fr unidirektionale Dioden Diotec Semiconductor AG TGL34-6.8 ... TGL34-200CA Characteristics (T = 25C) Kennwerte (T = 25C) j j Type Breakdown voltage at I = 1 mA Stand-off Max. rev. current Max. clamping voltage T Typ Abbruch-Spannung bei IT = 1 mA voltage Max. Sperrstrom Max. Begrenzer-Spannung *) at / bei I = 10 mA Sperrspannung at / bei V at / bei I (10/1000 s) T WM PPM unidirectional bidirectional V V V V I A V V I A BR WM D C PPM TGL34-6.8 TGL34-6.8C 6.8 10% 6.12...7.48 *) 5.5 1000 10.8 13.9 TGL34-6.8A TGL34-6.8CA 6.8 5% 6.45...7.14 *) 5.8 1000 10.5 14.3 TGL34-7.5 TGL34-7.5C 7.5 10% 6.75...8.25 *) 6.0 500 11.7 12.8 TGL34-7.5A TGL34-7.5CA 7.5 5% 7.13...7.88 *) 6.4 500 11.3 13.3 TGL34-8.2 TGL34-8.2C 8.2 10% 7.38...9.02 *) 6.6 200 12.5 12.0 TGL34-8.2A TGL34-8.2CA 8.2 5% 7.79...8.61 *) 7.0 200 12.1 12.4 TGL34-9.1 TGL34-9.1C 9.1 10% 8.19...10.0 7.3 50 13.8 10.9 TGL34-9.1A TGL34-9.1CA 9.1 5% 8.65...9.55 7.7 50 13.4 11.2 TGL34-10 TGL34-10C 10 10% 9.0...11.0 8.1 10 15.0 10.0 TGL34-10A TGL34-10CA 10 5% 9.5...10.5 8.5 10 14.5 10.3 TGL34-11 TGL34-11C 11 10% 9.9...12.1 8.9 5 16.2 9.3 TGL34-11A TGL34-11CA 11 5% 10.5...11.6 9.4 5 15.6 9.6 TGL34-12 TGL34-12C 12 10% 10.8...13.2 9.7 5 17.3 8.7 TGL34-12A TGL34-12CA 12 5% 11.4...12.6 10.2 5 16.7 9.0 TGL34-13 TGL34-13C 13 10% 11.7...14.3 10.5 5 19.0 7.9 TGL34-13A TGL34-13CA 13 5% 12.4...13.7 11.1 5 18.2 8.2 TGL34-15 TGL34-15C 15 10% 13.5...16.5 12.1 5 22.0 6.8 TGL34-15A TGL34-15CA 15 5% 14.3...15.8 12.8 5 21.2 7.1 TGL34-16 TGL34-16C 16 10% 14.4...17.6 12.9 5 23.5 6.4 TGL34-16A TGL34-16CA 16 5% 15.2...16.8 13.6 5 22.5 6.7 TGL34-18 TGL34-18C 18 10% 16.2...19.8 14.5 5 26.5 5.7 TGL34-18A TGL34-18CA 18 5% 17.1...18.9 15.3 5 25.2 6.0 TGL34-20 TGL34-20C 20 10% 18.0...22.0 16.2 5 29.1 5.2 TGL34-20A TGL34-20CA 20 5% 19.0...21.0 17.1 5 27.7 5.4 TGL34-22 TGL34-22C 22 10% 19.8...24.2 17.8 5 31.9 4.7 TGL34-22A TGL34-22CA 22 5% 20.9...23.1 18.8 5 30.6 4.9 TGL34-24 TGL34-24C 24 10% 21.6...26.4 19.4 5 34.7 4.3 TGL34-24A TGL34-24CA 24 5% 22.8...25.2 20.5 5 33.2 4.5 TGL34-27 TGL34-27C 27 10% 24.3...29.7 21.8 5 39.1 3.8 TGL34-27A TGL34-27CA 27 5% 25.7...28.4 23.1 5 37.5 4.0 TGL34-30 TGL34-30C 30 10% 27.0...33.0 24.3 5 43.5 3.4 TGL34-30A TGL34-30CA 30 5% 28.5...31.5 25.6 5 41.4 3.6 TGL34-33 TGL34-33C 33 10% 29.7...36.3 26.8 5 47.7 3.1 TGL34-33A TGL34-33CA 33 5% 31.4...34.7 28.2 5 45.7 3.3 TGL34-36 TGL34-36C 36 10% 32.4...39.6 29.1 5 52.0 2.9 TGL34-36A TGL34-36CA 36 5% 34.2...37.8 30.8 5 49.9 3.0 TGL34-39 TGL34-39C 39 10% 35.1...42.9 31.6 5 56.4 2.7 TGL34-39A TGL34-39CA 39 5% 37.1...41.0 33.3 5 53.9 2.8 For bidirectional types (suffix C or CA), electrical characteristics apply in both directions. Fr bidirektionale Dioden (Suffix C oder CA) gelten die elektrischen Werte in beiden Richtungen. 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Diotec Electronics
DIOTEC SEMICONDUCTOR
DIOTEC SEMICONDUCTOR AG
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