Technical Data 11130 Effective September 2020 STN06XXXXB101 TVS Diode ESD suppressor Applications Cellular handsets and accessories Wearables Notebooks, desktops, and servers Portable instrumentation Communication systems Microprocessor based equipment Environmental compliance and general Product features specifications Protects one bi-directional I/O line IEC61000-4-2 (ESD) Low clamping voltage Up to 30 kV (air) Low operating voltage Up to 30 kV (contact) Low leakage current IEC61000-4-5 (Lightning) Up to 7 A (8/20 s) Ultra-low capacitance HALOGEN Meets moisture sensitivity level (MSL) 3 HF Pb Molding compound flammability rating: FREE UL 94V-0 Termination finish:Ni/Pd/Au Ordering part number ST N06 1 033 B 101 Family Package (N06=DFN0603) Number of channels (1) Operating voltage (033 = 3.3 V) Bi/Uni directional (B= Bi) Capacitance (101 = 10 pF) Pin out/functional diagramTechnical Data 11130 STN06XXXXB101 Effective September 2020 TVS Diode ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STN061033B101 STN061050B101 Peak pulse power dissipation on 8/20 s waveform P 60 80 W pp ESD per IEC 61000-4-2 (Air) V +/-30 +/-30 kV ESD ESD per IEC 61000-4-2 (Contact) +/-30 +/-30 Lead soldering temperature T +260 (10 seconds) +260 (10 seconds C L Operating junction temperature range T -55 to +125 -55 to +125 C J Storage temperature range T -55 to +150 -55 to +150 C STG Electrical characteristics (+25 C) STN061033B101 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 3.3 V (V) RWM Reverse breakdown voltage I = 1 mA 3.7 - - V (V) T BR Reverse leakage current V = 3.3 V - - 100 I (A) RWM R Peak pulse current t = 8/20 s - - 7 I (A) p pp Clamping voltage I = 1 A, t = 8/20 s - 5.5 7 V (V) PP p C I = 7 A, t = 8/20 s - 8.5 10 V (V) PP p C Junction capacitance V = 0 V, f = 1 MHz - 10 15 C (pF) RWM J STN061050B101 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5 V (V) RWM Reverse breakdown voltage I = 1 mA 5.5 - - V (V) T BR Reverse leakage current V = 5 V - - 100 I (A) RWM R Peak pulse current t = 8/20 s - - 5 Ipp (A) p Clamping voltage I = 1 A, t = 8/20 s - 9.5 11 V (V) PP p C I = 5 A, t = 8/20 s - 13 15 V (V) PP p C Junction capacitance V = 0 V, f = 1 MHz - 10 15 C (pF) RWM J 2 www.eaton.com/electronics