Technical Data 11133 Effective September 2020 STN101XXXBXXX TVS Diode ESD suppressor Applications Cellular handsets and accessories Personal digital assistants (PDAs) Notebooks, desktops, and servers Portable instrumentation Microprocessor based equipment Digital cameras Environmental compliance and general Product features specifications Protects one bi-directional I/O line IEC61000-4-2 (ESD) Low clamping voltage Up to 30 kV (air) Low operating voltage Up to 30 kV (contact) Meets moisture sensitivity level (MSL) 3 IEC61000-4-5 (Lightning) Up to 8 A (8/20 s) Molding compound flammability rating: UL 94V-0 HALOGEN Termination finish:Ni/Pd/Au Pb HF FREE Ordering part number ST N10 1 033 B 101 Family Package (N10- DFN1006) Number of channels (1) Operating voltage (033- 3.3 V) Bi/Uni directional (B- Bi) Capacitance (101- 10 pF) Pin out/functional diagramTechnical Data 11133 STN101XXXBXXX Effective September 2020 TVS Diode ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Value Unit STN101033B101 STN101050B101 STN101120 B111 Peak pulse power dissipation on 8/20 s waveform P 100 100 150 W pp ESD per IEC 61000-4-2 (Air) V +/-30 +/-30 +/-30 kV ESD ESD per IEC 61000-4-2 (Contact) +/-30 +/-30 +/-30 Lead soldering temperature T +260 (10 seconds) +260 (10 seconds) +260 (10 seconds) C L Operating junction temperature range T -55 to +125 -55 to +125 -55 to +125 C J Storage temperature range T -55 to +150 -55 to +150 -55 to +150 C STG Electrical characteristics (+25 C) STN101033B101 Parameter Test condition Minimum Typical Maximum Symbol Units) Reverse working voltage - - - 3.3 V (V) RWM Reverse breakdown voltage I = 1 mA 3.6 - - V (V) T BR Reverse holding voltage I = 50 mA 3.5 - - V H H Reverse leakage current V = 3.3 V - - 1.0 I (A) RWM R Peak pulse current t = 8/20 s - - 7 I (A) p pp Clamping voltage I = 7 A, - 9 11 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 10 - C (pF) RWM J STN101050B101 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 5.0 V (V) RWM Reverse breakdown voltage I = 1 mA 5.5 6 7.5 V (V) T BR Reverse leakage current V = 5 V - - 0.1 I (A) RWM R Peak pulse current t = 8/20 s - - 8 I (A) p pp Clamping voltage I = 1 A, - 7 10 V (V) PP C t = 8/20 s p I = 8 A, 11 13 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 10 18 C (pF) RWM J STN101120B111 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage - - - 12 V (V) RWM Reverse breakdown voltage I = 1 mA 13.3 - - V (V) T BR Reverse leakage current V = 12 V - - 200 I (A) RWM R Peak pulse current t = 8/20 s - - 4 I (A) p pp Clamping voltage I = 1 A, - 16 20 V (V) PP C t = 8/20 s p I = 4 A, - 22 26 V (V) PP C t = 8/20 s p Junction capacitance V = 0 V, f = 1 MHz - 11 - C (pF) RWM J 2 www.eaton.com/electronics